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IRFB4332PBF

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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB4332PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB4332PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGS is rated to ±30 V (Gate-to-Source Voltage absolute maximum), and VGS(th) is 3.0 V min to 5.0 V max at VDS = VGS, ID = 250 µA.
2 D passive Drain; BVDSS is 250 V minimum, with RDS(on) of 29 mΩ typical and 33 mΩ maximum at VGS = 10 V, ID = 35 A.
3 S passive Source; continuous body-diode source current IS is rated to 60 A maximum at TC = 25°C, and internal source inductance LS is 7.5 nH typical.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 250 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 29 33 mΩ VGS = 10V, ID = 35A 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 250V, VGS = 0V 2
Drain-to-Source Leakage Current (TJ = 125°C) IDSS 1 mA VDS = 250V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 100 S VDS = 25V, ID = 35A 2
Total Gate Charge Qg 99 150 nC VDD = 125V, ID = 35A, VGS = 10V 2
Shoot Through Blocking Time tst 100 ns VDD = 200V, VGS = 15V, RG= 4.7Ω 2
Single Pulse Avalanche Energy EAS 230 mJ Starting TJ = 25°C, L = 0.39mH, RG = 25Ω, IAS = 35A 2
Continuous Source Current (Body Diode) IS 60 A TC = 25°C 2
Pulsed Source Current (Body Diode) ISM 230 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 35A, VGS = 0V 2
Reverse Recovery Time trr 190 290 ns TJ = 25°C, IF = 35A, VDD = 50V, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 820 1230 nC TJ = 25°C, IF = 35A, VDD = 50V, di/dt = 100A/µs 2
Gate-to-Source Voltage VGS -30 30 V Printed as ±30 1
Continuous Drain Current, VGS @ 10V ID 60 A TC = 25°C 1
Continuous Drain Current, VGS @ 10V ID 42 A TC = 100°C 1
Pulsed Drain Current IDM 230 A 1
Repetitive Peak Current IRP 120 A TC = 100°C 1
Power Dissipation PD 390 W TC = 25°C 1
Power Dissipation PD 200 W TC = 100°C 1
Operating Junction Temperature TJ -40 175 °C 1
Storage Temperature Range TSTG -40 175 °C 1
Soldering Temperature 300 °C for 10 seconds 1
Mounting Torque 10 lbin 6-32 or M3 screw; printed as 10lbin (1.1Nm) 1
Junction-to-Case Thermal Resistance RθJC 0.38 °C/W 1
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W 1
Breakdown Voltage Temp. Coefficient ΔBVDSS/ΔTJ 170 mV/°C Reference to 25°C, ID = 1mA 2
Gate Threshold Voltage Coefficient ΔVGS(th)/ΔTJ -14 mV/°C 2
Gate-to-Drain Charge Qgd 35 nC 2
Input Capacitance Ciss 5860 pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz 2
Output Capacitance Coss 530 pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz 2
Reverse Transfer Capacitance Crss 130 pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz 2
Effective Output Capacitance Coss eff. 360 pF VGS = 0V, VDS = 0V to 200V 2
Internal Drain Inductance LD 4.5 nH Between lead, 6mm (0.25in.) from package and center of die contact 2
Internal Source Inductance LS 7.5 nH Between lead, 6mm (0.25in.) from package and center of die contact 2
Linear Derating Factor 2.6 W/°C 1
Case-to-Sink Thermal Resistance, Flat, Greased Surface RθCS 0.5 °C/W Case-to-Sink, Flat, Greased Surface 1
Repetitive Avalanche Voltage (typ) VDS(Avalanche) 300 V 2

CAD (KiCad official)

  • Symbol: IRFB4332PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb4332pbf-etched.step / irfb4332pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb4332pbf.step / irfb4332pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 bf42fb2e57557459, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF