component
IRFB4321PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFB4321PBF
Infineon Technologies · MOSFETs · TO-220AB
IRFB4321PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-to-source voltage VGS is rated at ±30 V (absolute maximum ratings). |
| 2 | D | passive | Drain terminal; the part is rated VDSS 150 V with 85 A continuous drain current at TC = 25°C (VGS @ 10 V). |
| 3 | S | passive | Source terminal; the body diode continuous source current IS is rated at 85 A and pulsed source current ISM at 330 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 150 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 12 | 15 | mΩ | VGS = 10V, ID = 33A | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250μA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | μA | VDS = 150V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | 1 | mA | VDS = 150V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 130 | S | VDS = 25V, ID = 50A | 2 | ||
| Total Gate Charge | Qg | 71 | 110 | nC | ID = 50A, VDS = 75V, VGS = 10V | 2 | |
| Continuous Source Current (Body Diode) | IS | 85 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 330 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 50A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 89 | 130 | ns | ID = 50A | 2 | |
| Reverse Recovery Charge | Qrr | 300 | 450 | nC | VR = 128V, di/dt = 100A/μs | 2 | |
| Continuous Drain Current | ID | 85 | A | TC = 25°C, VGS = 10V | 1 | ||
| Continuous Drain Current | ID | 60 | A | TC = 100°C, VGS = 10V | 1 | ||
| Pulsed Drain Current | IDM | 330 | A | 1 | |||
| Maximum Power Dissipation | PD | 350 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 2.3 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | Thermally limited | 1 | ||
| Operating Junction Temperature | TJ | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 0.43 | °C/W | 1 | |||
| Case-to-Sink Thermal Resistance, Flat, Greased Surface | RθCS | 0.5 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
IRFB4321PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irfb4321pbf-etched.step/irfb4321pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb4321pbf.step/irfb4321pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
907310172833e06e, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFB4321PBF
**Infineon Technologies** · MOSFETs · TO-220AB
IRFB4321PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-to-source voltage VGS is rated at ±30 V (absolute maximum ratings). |
| 2 | D | passive | Drain terminal; the part is rated VDSS 150 V with 85 A continuous drain current at TC = 25°C (VGS @ 10 V). |
| 3 | S | passive | Source terminal; the body diode continuous source current IS is rated at 85 A and pulsed source current ISM at 330 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 150 | | | V | VGS = 0V, ID = 250μA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 12 | 15 | mΩ | VGS = 10V, ID = 33A | 2 |
| Gate Threshold Voltage | VGS(th) | 3 | | 5 | V | VDS = VGS, ID = 250μA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | μA | VDS = 150V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | | | 1 | mA | VDS = 150V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 130 | | | S | VDS = 25V, ID = 50A | 2 |
| Total Gate Charge | Qg | | 71 | 110 | nC | ID = 50A, VDS = 75V, VGS = 10V | 2 |
| Continuous Source Current (Body Diode) | IS | | | 85 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 330 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 50A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 89 | 130 | ns | ID = 50A | 2 |
| Reverse Recovery Charge | Qrr | | 300 | 450 | nC | VR = 128V, di/dt = 100A/μs | 2 |
| Continuous Drain Current | ID | | | 85 | A | TC = 25°C, VGS = 10V | 1 |
| Continuous Drain Current | ID | | | 60 | A | TC = 100°C, VGS = 10V | 1 |
| Pulsed Drain Current | IDM | | | 330 | A | | 1 |
| Maximum Power Dissipation | PD | | | 350 | W | TC = 25°C | 1 |
| Linear Derating Factor | | | | 2.3 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 120 | mJ | Thermally limited | 1 |
| Operating Junction Temperature | TJ | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 0.43 | °C/W | | 1 |
| Case-to-Sink Thermal Resistance, Flat, Greased Surface | RθCS | | 0.5 | | °C/W | | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `IRFB4321PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irfb4321pbf-etched.step` / `irfb4321pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb4321pbf.step` / `irfb4321pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896298312982528) (8 pp, sha256 `907310172833e06e`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfb4321pbf-datasheet.pdf)