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IRFB4310PBF

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Infineon Technologies MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB4310PBF

Infineon Technologies · MOSFETs · ITO-220AB-3

IRFB4310PBF from Infineon Technologies, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to ±20V with threshold VGS(th) of 2.0V min to 4.0V max at ID = 250µA.
2 D passive Drain (also connected to the mounting tab); VDSS 100V, continuous drain current 130A at TC = 25°C (package limited to 75A).
3 S passive Source; body diode continuous current 130A and pulsed 550A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package ITO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current (TC = 25°C) ID 130 A TC = 25°C, VGS @ 10V 1
Continuous Drain Current (TC = 100°C) ID 92 A TC = 100°C, VGS @ 10V 1
Pulsed Drain Current IDM 550 A 1
Maximum Power Dissipation PD 300 W TC = 25°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dV/dt 14 V/ns 1
Operating Junction Temperature TJ -55 175 °C Operating junction 1
Single Pulse Avalanche Energy EAS 980 mJ Thermally limited 1
Mounting Torque 10 lbin 6-32 or M3 screw 1
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 5.6 7 mΩ VGS = 10V, ID = 75A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 100V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 100V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 200 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -200 nA VGS = -20V 2
Forward Transconductance gfs 160 S VDS = 50V, ID = 75A 2
Total Gate Charge Qg 170 250 nC ID = 75A, VDS = 80V, VGS = 10V 2
Continuous Source Current (Body Diode) IS 130 A MOSFET symbol showing integral reverse p-n junction diode 2
Pulsed Source Current (Body Diode) ISM 550 A MOSFET symbol showing integral reverse p-n junction diode 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 75A, VGS = 0V 2
Reverse Recovery Time trr 45 68 ns TJ = 25°C, VR = 85V, IF = 75A 2
Reverse Recovery Time trr 55 83 ns TJ = 125°C, IF = 75A 2
Reverse Recovery Charge Qrr 82 120 nC TJ = 25°C, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 120 180 nC TJ = 125°C 2
Thermal Resistance, Junction-to-Case RθJC 0.5 °C/W Junction-to-Case 1
Thermal Resistance, Junction-to-Ambient (TO-220) RθJA 62 °C/W Junction-to-Ambient, TO-220 1
Thermal Resistance, Case-to-Sink (flat, greased surface, TO-220) RθCS 0.5 °C/W Case-to-Sink, Flat Greased Surface, TO-220 1

CAD (KiCad official)

  • Symbol: IRFB4310PBF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 18754f0f35a9f09e, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF