component

IRFB4229PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirfb4229pbffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 21d ago
viewers irfb4229pbf: viewers · Ray 21d ago
irfb4229pbf-etched.glb irfb4229pbf: factory component page (tier=lcsc) · Ray 21d ago
irfb4229pbf-etched.step irfb4229pbf: factory component page (tier=lcsc) · Ray 21d ago
irfb4229pbf-hero.glb irfb4229pbf: hero GLB from the etched model (keeps the MPN mark) · Ray 21d ago
irfb4229pbf-hero.overlay.json Publish 0.1.0 · Ray 21d ago
irfb4229pbf.glb Publish 0.1.0 · Ray 21d ago
irfb4229pbf.kicad_mod Publish 0.1.0 · Ray 21d ago
irfb4229pbf.kicad_sym Publish 0.1.0 · Ray 21d ago
irfb4229pbf.lbr Publish 0.1.0 · Ray 21d ago
irfb4229pbf.step Publish 0.1.0 · Ray 21d ago
package.json Publish 0.1.0 · Ray 21d ago
page.json irfb4229pbf: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 16d ago
README.md irfb4229pbf: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 16d ago

IRFB4229PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB4229PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the HEXFET; the absolute maximum gate-to-source voltage is ±30 V (VGS).
2 D passive Drain terminal; continuous drain current is 46 A at TC = 25°C and the minimum drain-to-source breakdown voltage is 250 V.
3 S passive Source terminal; the integral body diode has a maximum forward voltage VSD of 1.3 V at IS = 26 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 250 V VGS = 0V, ID = 250µA 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 38 46 mΩ VGS = 10V, ID = 26A 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 250V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 1 mA VDS = 250V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 83 S VDS = 25V, ID = 26A 2
Total Gate Charge Qg 72 110 nC VDD = 125V, ID = 26A, VGS = 10V 2
Shoot Through Blocking Time tst 100 ns 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 26A, VGS = 0V 2
Reverse Recovery Time trr 190 290 ns TJ = 25°C, IF = 26A, VDD = 50V, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 840 1260 nC TJ = 25°C, IF = 26A, VDD = 50V, di/dt = 100A/µs 2
Gate-to-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 46 A VGS @ 10V, TC = 25°C 1
Continuous Drain Current ID 33 A VGS @ 10V, TC = 100°C 1
Pulsed Drain Current IDM 180 A 1
Repetitive Peak Current IRP 91 A TC = 100°C 1
Power Dissipation PD 330 W TC = 25°C 1
Power Dissipation PD 190 W TC = 100°C 1
Linear Derating Factor 2.2 W/°C 1
Operating Junction Temperature TJ -40 175 °C 1
Soldering Temperature 300 °C for 10 seconds 1
Mounting Torque, 6-32 or M3 Screw 10 lbin 6-32 or M3 screw 1
Junction-to-Case Thermal Resistance RθJC 0.45 °C/W 1
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W 1
Case-to-Sink Thermal Resistance, Flat, Greased Surface RθCS 0.5 °C/W Flat, greased surface 1

CAD (KiCad official)

  • Symbol: IRFB4229PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb4229pbf-etched.step / irfb4229pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb4229pbf.step / irfb4229pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 897e32ff2ec11adf, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF