component
IRFB4137PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated MOSFET control terminal; drives channel enhancement. VGS(max) = \u00b120V, VGS(th) = 3.0-5.0V, RG typ. 1.3\u03a9, Ciss typ. 5168pF. Total gate charge Qg typ. 83nC at VGS=10V, ID=24A, VDS=150V."+ "description": "Gate. Insulated MOSFET control terminal; drives channel enhancement. VGS(max) = ±20V, VGS(th) = 3.0-5.0V, RG typ. 1.3Ω, Ciss typ. 5168pF. Total gate charge Qg typ. 83nC at VGS=10V, ID=24A, VDS=150V." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. High-side channel terminal and body-diode cathode; also electrically connected to the TO-220 metal tab. VDSS = 300V, ID = 38A @ TC=25\u00b0C (27A @ TC=100\u00b0C), IDM pulsed = 152A, RDS(on) typ. 56 m\u03a9 / max 69 m\u03a9 at VGS=10V, ID=24A."+ "description": "Drain. High-side channel terminal and body-diode cathode; also electrically connected to the TO-220 metal tab. VDSS = 300V, ID = 38A @ TC=25°C (27A @ TC=100°C), IDM pulsed = 152A, RDS(on) typ. 56 mΩ / max 69 mΩ at VGS=10V, ID=24A." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. Low-side channel terminal, body-diode anode and reference for VGS. Continuous source (body-diode) current IS = 38A, ISM = 152A pulsed, VSD max 1.3V at IS=24A, VGS=0V; trr typ. 302ns, Qrr typ. 1739nC at TJ=25\u00b0C."+ "description": "Source. Low-side channel terminal, body-diode anode and reference for VGS. Continuous source (body-diode) current IS = 38A, ISM = 152A pulsed, VSD max 1.3V at IS=24A, VGS=0V; trr typ. 302ns, Qrr typ. 1739nC at TJ=25°C." } ], "provenance": {@@ -114,5 +114,8 @@ "docs/irfb4137pbf-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }