component
IRFB4137PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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Contents
README
markdownIRFB4137PBF
Infineon Technologies · MOSFETs · TO-220
IRFB4137PBF from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated MOSFET control terminal; drives channel enhancement. VGS(max) = ±20V, VGS(th) = 3.0-5.0V, RG typ. 1.3Ω, Ciss typ. 5168pF. Total gate charge Qg typ. 83nC at VGS=10V, ID=24A, VDS=150V. |
| 2 | D | passive | Drain. High-side channel terminal and body-diode cathode; also electrically connected to the TO-220 metal tab. VDSS = 300V, ID = 38A @ TC=25°C (27A @ TC=100°C), IDM pulsed = 152A, RDS(on) typ. 56 mΩ / max 69 mΩ at VGS=10V, ID=24A. |
| 3 | S | passive | Source. Low-side channel terminal, body-diode anode and reference for VGS. Continuous source (body-diode) current IS = 38A, ISM = 152A pulsed, VSD max 1.3V at IS=24A, VGS=0V; trr typ. 302ns, Qrr typ. 1739nC at TJ=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Ordering variants
Same part, different packaging or reel option.
IRFB4137PbF
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current (TC = 25°C) | ID | 38 | A | TC = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current (TC = 100°C) | ID | 27 | A | TC = 100°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 152 | A | 1 | |||
| Maximum Power Dissipation | PD | 341 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 2.3 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 8.9 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N·m | 6-32 or M3 screw | 1 | |||
| Single Pulse Avalanche Energy (Thermally limited) | EAS | 414 | mJ | Thermally limited, single pulse | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.44 | °C/W | Junction-to-Case | 1 | ||
| Case-to-Sink Thermal Resistance (flat greased surface) | RθCS | 0.5 | °C/W | Case-to-Sink, flat greased surface | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | Junction-to-Ambient | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 300 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 56 | 69 | mΩ | VGS = 10V, ID = 24A | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 300 V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | 250 | µA | VDS = 300V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | -100 | nA | VGS = -20V | 2 | |||
| Forward Transconductance | gfs | 45 | S | VDS = 50V, ID = 24A | 2 | ||
| Total Gate Charge | Qg | 83 | 125 | nC | ID = 24A | 2 | |
| Gate-to-Source Charge | Qgs | 28 | 42 | nC | VDS = 150V | 2 | |
| Gate-to-Drain Charge | Qgd | 26 | 39 | nC | VGS = 10V | 2 | |
| Continuous Source Current (Body Diode) | IS | 38 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 152 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 24A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
IRFB4137PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irfb4137pbf-etched.step/irfb4137pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb4137pbf.step/irfb4137pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
586be72f326b411c, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).