component
IRFB4110GPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFB4110GPBF
Infineon Technologies · MOSFETs · TO-220AB
IRFB4110GPBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel HEXFET; VGS rated ±20 V maximum with threshold VGS(th) of 2.0 V min to 4.0 V max at ID = 250µA. |
| 2 | D | passive | Drain terminal (also connected to the tab); VDSS 100 V, continuous ID 180 A silicon limited and 120 A package/wire-bond limited. |
| 3 | S | passive | Source terminal; body diode continuous source current IS up to 170 A and pulsed up to 670 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 3.7 | 4.5 | mΩ | VGS = 10V, ID = 75A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 100V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS = 100V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 160 | S | VDS = 50V, ID = 75A | 2 | ||
| Total Gate Charge | Qg | 150 | 210 | nC | ID = 75A | 2 | |
| Continuous Source Current (Body Diode) | IS | 170 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 670 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 50 | 75 | ns | TJ = 25°C, VR = 85V, IF = 75A | 2 | |
| Reverse Recovery Time | trr | 60 | 90 | ns | TJ = 125°C, VR = 85V, IF = 75A | 2 | |
| Reverse Recovery Charge | Qrr | 94 | 140 | nC | TJ = 25°C, di/dt = 100A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 140 | 210 | nC | TJ = 125°C, di/dt = 100A/µs | 2 | |
| Continuous Drain Current (Silicon Limited) | ID | 180 | A | TC = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 130 | A | TC = 100°C, VGS @ 10V | 1 | ||
| Continuous Drain Current (Wire Bond Limited) | ID | 120 | A | TC = 25°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 670 | A | 1 | |||
| Maximum Power Dissipation | PD | 370 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 2.5 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery | dv/dt | 5.3 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Single Pulse Avalanche Energy | EAS | 190 | mJ | Thermally limited | 1 | ||
| Avalanche Current | IAR | 120 | A | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 0.402 | °C/W | 1 | |||
| Case-to-Sink Thermal Resistance | RθCS | 0.5 | °C/W | Flat Greased Surface | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | 1 | |||
| Breakdown Voltage Temp. Coefficient | ∆V(BR)DSS/∆TJ | 0.108 | V/°C | Reference to 25°C, ID = 5mA | 2 | ||
| Gate Resistance | RG | 1.3 | Ω | 2 | |||
| Input Capacitance | Ciss | 9620 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 670 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 250 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
IRFB4110GPBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irfb4110gpbf-etched.step/irfb4110gpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb4110gpbf.step/irfb4110gpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
133dfd400f7e3776, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFB4110GPBF
**Infineon Technologies** · MOSFETs · TO-220AB
IRFB4110GPBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel HEXFET; VGS rated ±20 V maximum with threshold VGS(th) of 2.0 V min to 4.0 V max at ID = 250µA. |
| 2 | D | passive | Drain terminal (also connected to the tab); VDSS 100 V, continuous ID 180 A silicon limited and 120 A package/wire-bond limited. |
| 3 | S | passive | Source terminal; body diode continuous source current IS up to 170 A and pulsed up to 670 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 3.7 | 4.5 | mΩ | VGS = 10V, ID = 75A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS = 100V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 250 | µA | VDS = 100V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | -100 | | | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 160 | | | S | VDS = 50V, ID = 75A | 2 |
| Total Gate Charge | Qg | | 150 | 210 | nC | ID = 75A | 2 |
| Continuous Source Current (Body Diode) | IS | | | 170 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 670 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 50 | 75 | ns | TJ = 25°C, VR = 85V, IF = 75A | 2 |
| Reverse Recovery Time | trr | | 60 | 90 | ns | TJ = 125°C, VR = 85V, IF = 75A | 2 |
| Reverse Recovery Charge | Qrr | | 94 | 140 | nC | TJ = 25°C, di/dt = 100A/µs | 2 |
| Reverse Recovery Charge | Qrr | | 140 | 210 | nC | TJ = 125°C, di/dt = 100A/µs | 2 |
| Continuous Drain Current (Silicon Limited) | ID | | | 180 | A | TC = 25°C, VGS @ 10V | 1 |
| Continuous Drain Current (Silicon Limited) | ID | | | 130 | A | TC = 100°C, VGS @ 10V | 1 |
| Continuous Drain Current (Wire Bond Limited) | ID | | | 120 | A | TC = 25°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 670 | A | | 1 |
| Maximum Power Dissipation | PD | | | 370 | W | TC = 25°C | 1 |
| Linear Derating Factor | | | | 2.5 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Peak Diode Recovery | dv/dt | | | 5.3 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Single Pulse Avalanche Energy | EAS | | | 190 | mJ | Thermally limited | 1 |
| Avalanche Current | IAR | | | 120 | A | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 0.402 | °C/W | | 1 |
| Case-to-Sink Thermal Resistance | RθCS | | 0.5 | | °C/W | Flat Greased Surface | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62 | °C/W | | 1 |
| Breakdown Voltage Temp. Coefficient | ∆V(BR)DSS/∆TJ | | 0.108 | | V/°C | Reference to 25°C, ID = 5mA | 2 |
| Gate Resistance | RG | | 1.3 | | Ω | | 2 |
| Input Capacitance | Ciss | | 9620 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 670 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 250 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
## CAD (KiCad official)
- Symbol: `IRFB4110GPBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irfb4110gpbf-etched.step` / `irfb4110gpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb4110gpbf.step` / `irfb4110gpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://www.infineon.com/dgdl/irfb4110gpbf.pdf?fileId=5546d462533600a4015356159f7f1e09) (9 pp, sha256 `133dfd400f7e3776`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfb4110gpbf-datasheet.pdf)