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Contents

README

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IRFB4020PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB4020PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; HEXFET lead assignment 1, gate-to-source voltage limited to ±20 V with 3.2 Ω typ. internal gate resistance and 3.0 to 4.9 V threshold.
2 D passive Drain; HEXFET lead assignment 2 (also the tab), rated for VDS 200 V and 18 A continuous at TC = 25°C.
3 S passive Source; HEXFET lead assignment 3, carries the 18 A continuous drain current at TC = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 200 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 80 100 mΩ VGS = 10V, ID = 11A 2
Gate Threshold Voltage VGS(th) 3 4.9 V VDS = VGS, ID = 100µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 200V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 200V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 24 S VDS = 50V, ID = 11A 2
Total Gate Charge Qg 18 29 nC 2
Continuous Source Current (Body Diode) IS 18 A 2
Pulsed Source Current (Body Diode) ISM 52 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 11A, VGS = 0V 2
Reverse Recovery Time trr 82 120 ns TJ = 25°C, IF = 11A, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 280 420 nC TJ = 25°C, IF = 11A, di/dt = 100A/µs 2
Drain-to-Source Voltage VDS 200 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 18 A TC = 25°C, VGS @ 10V 1
Continuous Drain Current ID 13 A TC = 100°C, VGS @ 10V 1
Pulsed Drain Current IDM 52 A 1
Power Dissipation PD 100 W TC = 25°C 1
Power Dissipation PD 52 W TC = 100°C 1
Linear Derating Factor 0.7 W/°C 1
Operating Junction Temperature Range TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbin 6-32 or M3 screw (1.1Nm) 1
Junction-to-Case Thermal Resistance RθJC 1.43 °C/W Junction-to-Case 1
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W Junction-to-Ambient 1
Case-to-Sink Thermal Resistance, Flat, Greased Surface RθCS 0.5 °C/W Case-to-Sink, Flat, Greased Surface 1

CAD (KiCad official)

  • Symbol: IRFB4020PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb4020pbf-etched.step / irfb4020pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb4020pbf.step / irfb4020pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 067db60a56d8267b, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF