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IRFB38N20D

Public Made by Adom

by adom

OSEN MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB38N20D

OSEN · MOSFETs · TO-220

IRFB38N20D from OSEN, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input of the N-channel MOSFET, rated for VGS ±20 V with a threshold of 2.0 to 4.0 V at ID=250µA.
2 Drain passive Drain terminal, rated for VDSS 200 V and 40 A continuous drain current (160 A pulsed).
3 Source passive Source terminal of the N-channel MOSFET, with a continuous body-diode forward current of 40 A.

Key specifications

Parameter Value
Manufacturer OSEN
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 200 V ID=250µA, VGS=0V, TJ=25°C 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250μA 2
Drain-Source On-Resistance RDS(on) 72 mΩ VGS=10V, ID=16A 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=200V, VGS=0 2
Continuous Drain-Source Diode Forward Current IS 40 A 3
Diode Forward On-Voltage VSD 1.4 V IS=30A, VGS=0 3
Thermal Resistance, Junction to Case Rth(j-c) 1.7 ℃/W 3
Drain-Source Voltage VDSS 200 V Tc=25°C 2
Gate-Source Voltage-Continuous VGS -20 20 V Tc=25°C 2
Drain Current-Continuous ID 40 A Tc=25°C 2
Drain Current-Single Pulsed IDM 160 A Tc=25°C 2
Power Dissipation PD 75 W Tc=25°C 2
Max. Operating junction temperature Tj 150 ℃ Tc=25°C 2
Forward Transconductance gfs 18 S VDS=40V, ID=16A 2
Turn-On Delay Time Td(on) 28 ns VDS=100V, ID=30A, RG=25Ω, VGS=10V 3
Rise Time Tr 36 ns VDS=100V, ID=30A, RG=25Ω, VGS=10V 3
Turn-Off Delay Time Td(off) 153 ns VDS=100V, ID=30A, RG=25Ω, VGS=10V 3
Fall Time Tf 88 ns VDS=100V, ID=30A, RG=25Ω, VGS=10V 3
Total Gate Charge Qg 55 nC VDS=160V, VGS=10V, ID=30A 3
Gate-Source Charge Qgs 11 nC VDS=160V, VGS=10V, ID=30A 3
Gate-Drain Charge Qgd 18 nC VDS=160V, VGS=10V, ID=30A 3
Input Capacitance Ciss 1450 pF VDS=25V, VGS=0, f=1MHz 3
Output Capacitance Coss 350 pF VDS=25V, VGS=0, f=1MHz 3
Reverse Transfer Capacitance Crss 38 pF VDS=25V, VGS=0, f=1MHz 3

CAD (KiCad official)

  • Symbol: IRFB38N20D
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irfb38n20d-etched.step / irfb38n20d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb38n20d.step / irfb38n20d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: OSEN datasheet (3 pp, sha256 7540fdf0d38fb670, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF