component

IRFB3607PBF-JSM

Public Made by Adom

by adom

JSMSEMI MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB3607PBF-JSM

JSMSEMI · MOSFETs · TO-220

IRFB3607PBF-JSM from JSMSEMI, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGSS limited to ±25 V and threshold VGS(th) of 2 to 4 V at ID=250uA.
2 D passive Drain; drain-to-source voltage up to 80 V (VDSS) with continuous drain current rated per the ratings table (package limited to 50 A).
3 S passive Source; main current return terminal of the 80 V N-channel MOSFET.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 80 V TA=25°C 1
Gate-to-Source Voltage VGSS -25 25 V TA=25°C 1
Continuous Drain Current ID 100 A TC=25°C 1
Continuous Drain Current ID 70 A TC=100°C 1
Pulsed Drain Current IDP 340 A TC=25°C 1
Avalanche Current IAS 20 A 1
Avalanche energy EAS 410 mJ 1
Maximum Power Dissipation PD 240 W TC=25°C 1
Maximum Power Dissipation PD 100 W TC=100°C 1
Junction & Storage Temperature Range TJ, TSTG -55 175 °C 1
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V,ID=250uA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=64V,VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 uA VDS=64V,VGS=0V, TJ=125°C 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS,ID=250uA 2
Gate Leakage Current IGSS -100 100 nA VGS=±25V, VDS=0V 2
Drain-Source On-Resistance RDS(on) 7.4 8.2 mΩ VGS=10V, ID=40A 2
Diode Forward Voltage VSD 1.3 V ISD=40A,VGS=0V 2
Diode Continuous Forward Current IS 100 A 2
Reverse Recovery Time trr 25 nS IF=40A, dI/dt=100A/us 2
Reverse Recovery Charge Qrr 18.5 nC IF=40A, dI/dt=100A/us 2
Gate Resistance RG 1.3 Ω VGS=0V, VDS=0V, Frequency=1MHz 2
Input Capacitance Ciss 850 pF VGS=0V, VDS=25V, Frequency=1MHz 2
Output Capacitance Coss 480 pF VGS=0V, VDS=25V, Frequency=1MHz 2
Reverse Transfer Capacitance Crss 278 pF VGS=0V, VDS=25V, Frequency=1MHz 2
Turn-On Delay Time td(on) 20.4 nS VDD=37.5V,ID=40A, VGS=10V,RG=6.8Ω 2
Rise Time tr 63 nS VDD=37.5V,ID=40A, VGS=10V,RG=6.8Ω 2
Turn-Off Delay Time td(off) 67 nS VDD=37.5V,ID=40A, VGS=10V,RG=6.8Ω 2
Fall Time tf 43 nS VDD=37.5V,ID=40A, VGS=10V,RG=6.8Ω 2
Total Gate Charge Qg 76 nC VDS=37.5V,VGS=10V,ID=40A 2
Gate-to-Source Charge Qgs 9.5 nC VDS=37.5V,VGS=10V,ID=40A 2
Gate-to-Drain Charge Qgd 40 nC VDS=37.5V,VGS=10V,ID=40A 2
Thermal Resistance-Junction to Case Rθjc 0.52 ℃/W 1
Thermal Resistance-Junction to Ambient Rθja 55 ℃/W 1

CAD (KiCad official)

  • Symbol: IRFB3607PBF-JSM
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irfb3607pbf-jsm-etched.step / irfb3607pbf-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb3607pbf-jsm.step / irfb3607pbf-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (7 pp, sha256 7337900424b88b3f, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF