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IRFB3307ZPBF

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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB3307ZPBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB3307ZPBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; VGS is limited to ±20 V per the absolute maximum ratings.
2 D passive Drain terminal; rated VDSS 75 V, with continuous ID of 128 A (silicon limited) and 120 A (package limited) at TC = 25°C.
3 S passive Source terminal; continuous body-diode source current is 128 A and pulsed source current is 512 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 75 V VGS = 0V, ID = 250μA 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 150μA 2
Drain-to-Source Leakage Current IDSS 20 μA VDS = 75V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 μA VDS = 75V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Static Drain-to-Source On-Resistance RDS(on) 4.6 5.8 mΩ VGS = 10V, ID = 75A 2
Forward Transconductance gfs 320 S VDS = 50V, ID = 75A 2
Total Gate Charge Qg 79 110 nC ID = 75A, VDS = 38V, VGS = 10V 2
Continuous Source Current (Body Diode) IS 128 A 2
Pulsed Source Current (Body Diode) ISM 512 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 75A, VGS = 0V 2
Reverse Recovery Time trr 33 50 ns TJ = 25°C, VR = 64V, IF = 75A 2
Reverse Recovery Time trr 39 59 ns TJ = 125°C, VR = 64V, IF = 75A 2
Reverse Recovery Charge Qrr 42 63 nC TJ = 25°C, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 56 84 nC TJ = 125°C 2
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C 128 A TC = 25°C 1
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 90 A TC = 100°C 1
Continuous Drain Current, VGS @ 10V (Wire Bond Limited) ID @ TC = 25°C 120 A TC = 25°C 1
Pulsed Drain Current IDM 512 A 1
Maximum Power Dissipation PD @TC = 25°C 230 W TC = 25°C 1
Linear Derating Factor 1.5 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt 6.7 V/ns 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbf·in 6-32 or M3 screw (1.1 N·m) 1
Single Pulse Avalanche Energy EAS 140 mJ Thermally limited 1
Junction-to-Case RθJC 0.65 °C/W 1
Case-to-Sink, Flat Greased Surface, TO-220 RθCS 0.5 °C/W 1
Junction-to-Ambient, TO-220 RθJA 62 °C/W 1
Breakdown Voltage Temperature Coefficient ΔV(BR)DSS/ΔTJ 0.094 V/°C Reference to 25°C, ID = 5mA 2

CAD (KiCad official)

  • Symbol: IRFB3307ZPBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb3307zpbf-etched.step / irfb3307zpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb3307zpbf.step / irfb3307zpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 943df424f5930dd3, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF