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IRFB3306PBF
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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFB3306PBF
Infineon Technologies · MOSFETs · TO-220AB
IRFB3306PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the HEXFET; the gate-to-source voltage is rated at ±20 V (VGS), with the device driven at VGS = 10 V for the specified RDS(on). |
| 2 | D | passive | Drain of the HEXFET; the drain-to-source breakdown voltage is 60 V minimum (V(BR)DSS) and the continuous drain current is 160 A at TC = 25°C (silicon limited). |
| 3 | S | passive | Source of the HEXFET; the continuous body-diode source current is rated at 160 A and the pulsed source current at 620 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 160 | A | TC = 25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 110 | A | TC = 100°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID | 120 | A | TC = 25°C | 1 | ||
| Pulsed Drain Current | IDM | 620 | A | 1 | |||
| Maximum Power Dissipation | PD | 230 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 1.5 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery | dv/dt | 14 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature, for 10 seconds | 300 | °C | 1.6mm from case, 10 seconds | 1 | |||
| Mounting torque, 6-32 or M3 screw | 10 | lb in | 6-32 or M3 screw | 1 | |||
| Single Pulse Avalanche Energy (thermally limited) | EAS | 184 | mJ | Thermally limited | 1 | ||
| Junction-to-Case | RθJC | 0.65 | °C/W | 1 | |||
| Case-to-Sink, Flat Greased Surface, TO-220 | RθCS | 0.5 | °C/W | Flat greased surface, TO-220 | 1 | ||
| Junction-to-Ambient, TO-220 | RθJA | 62 | °C/W | TO-220 | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250μA | 2 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.07 | V/°C | Reference to 25°C, ID = 5mA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 3.3 | 4.2 | mΩ | VGS = 10V, ID = 75A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 150μA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | μA | VDS = 48V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 230 | S | VDS = 50V, ID = 75A | 2 | ||
| Total Gate Charge | Qg | 85 | 120 | nC | 2 | ||
| Continuous Source Current (Body Diode) | IS | 160 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 620 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
IRFB3306PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irfb3306pbf-etched.step/irfb3306pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb3306pbf.step/irfb3306pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (12 pp, sha256
3a42104e8b332cf0, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFB3306PBF
**Infineon Technologies** · MOSFETs · TO-220AB
IRFB3306PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the HEXFET; the gate-to-source voltage is rated at ±20 V (VGS), with the device driven at VGS = 10 V for the specified RDS(on). |
| 2 | D | passive | Drain of the HEXFET; the drain-to-source breakdown voltage is 60 V minimum (V(BR)DSS) and the continuous drain current is 160 A at TC = 25°C (silicon limited). |
| 3 | S | passive | Source of the HEXFET; the continuous body-diode source current is rated at 160 A and the pulsed source current at 620 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 160 | A | TC = 25°C | 1 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 110 | A | TC = 100°C | 1 |
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID | | | 120 | A | TC = 25°C | 1 |
| Pulsed Drain Current | IDM | | | 620 | A | | 1 |
| Maximum Power Dissipation | PD | | | 230 | W | TC = 25°C | 1 |
| Linear Derating Factor | | | | 1.5 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Peak Diode Recovery | dv/dt | | | 14 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature, for 10 seconds | | | | 300 | °C | 1.6mm from case, 10 seconds | 1 |
| Mounting torque, 6-32 or M3 screw | | | | 10 | lb in | 6-32 or M3 screw | 1 |
| Single Pulse Avalanche Energy (thermally limited) | EAS | | | 184 | mJ | Thermally limited | 1 |
| Junction-to-Case | RθJC | | | 0.65 | °C/W | | 1 |
| Case-to-Sink, Flat Greased Surface, TO-220 | RθCS | | 0.5 | | °C/W | Flat greased surface, TO-220 | 1 |
| Junction-to-Ambient, TO-220 | RθJA | | | 62 | °C/W | TO-220 | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID = 250μA | 2 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 0.07 | | V/°C | Reference to 25°C, ID = 5mA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 3.3 | 4.2 | mΩ | VGS = 10V, ID = 75A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 150μA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | μA | VDS = 60V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 250 | μA | VDS = 48V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 230 | | | S | VDS = 50V, ID = 75A | 2 |
| Total Gate Charge | Qg | | 85 | 120 | nC | | 2 |
| Continuous Source Current (Body Diode) | IS | | | 160 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 620 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 |
## CAD (KiCad official)
- Symbol: `IRFB3306PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irfb3306pbf-etched.step` / `irfb3306pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb3306pbf.step` / `irfb3306pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896298296070144) (12 pp, sha256 `3a42104e8b332cf0`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfb3306pbf-datasheet.pdf)