component
IRFB3306
Public Made by Adomby adom
Minos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFB3306
Minos · MOSFETs · TO-220
IRFB3306 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20V max and a gate threshold of 2V to 4V at ID=250μA. |
| 2 | D | passive | Drain; also connected to the metal tab, with VDS rated 60V max and continuous drain current of 150A. |
| 3 | S | passive | Source; the current return terminal of the N-channel MOSFET, with body diode forward voltage of 1.2V max at IS=150A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 3.5 | 4.2 | mΩ | VGS=10V, ID=50A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=150A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 150 | A | 1 | |||
| Drain Current-Pulsed | IDM | 600 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 210 | W | Tc=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 1000 | mJ | Note 2 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.7 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
IRFB3306 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irfb3306-etched.step/irfb3306-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb3306.step/irfb3306.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (7 pp, sha256
a2370d266a8d7b14, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFB3306
**Minos** · MOSFETs · TO-220
IRFB3306 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20V max and a gate threshold of 2V to 4V at ID=250μA. |
| 2 | D | passive | Drain; also connected to the metal tab, with VDS rated 60V max and continuous drain current of 150A. |
| 3 | S | passive | Source; the current return terminal of the N-channel MOSFET, with body diode forward voltage of 1.2V max at IS=150A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 3.5 | 4.2 | mΩ | VGS=10V, ID=50A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=150A | 2 |
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | 150 | A | | 1 |
| Drain Current-Pulsed | IDM | | | 600 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD | | | 210 | W | Tc=25℃ | 1 |
| Single pulse avalanche energy | EAS | | | 1000 | mJ | Note 2 | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | 0.7 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `IRFB3306`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `irfb3306-etched.step` / `irfb3306-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb3306.step` / `irfb3306.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Minos datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590921999428632576) (7 pp, sha256 `a2370d266a8d7b14`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfb3306-datasheet.pdf)