component
IRFB3207ZPbF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFB3207ZPbF
Infineon Technologies · MOSFETs · TO-220AB
IRFB3207ZPbF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the HEXFET; gate-to-source voltage is rated ±20 V (VGS). |
| 2 | D | passive | Drain terminal; the device is rated 75 V VDSS with continuous drain current of 170 A (silicon limited) at TC = 25°C, and 120 A limited by package. |
| 3 | S | passive | Source terminal; continuous body-diode source current is rated 170 A (IS) and pulsed source current 670 A (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 75 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 3.3 | 4.1 | mΩ | VGS = 10V, ID = 75A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 150μA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | μA | VDS = 75V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | μA | VDS = 75V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 280 | S | VDS = 50V, ID = 75A | 2 | ||
| Total Gate Charge | Qg | 120 | 170 | nC | ID = 75A, VDS = 38V, VGS = 10V | 2 | |
| Continuous Source Current (Body Diode) | IS | 170 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 | ||
| Pulsed Source Current (Body Diode) | ISM | 670 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 36 | 54 | ns | TJ = 25°C, VR = 64V, IF = 75A | 2 | |
| Reverse Recovery Time | trr | 41 | 62 | ns | TJ = 125°C, VR = 64V, IF = 75A | 2 | |
| Reverse Recovery Charge | Qrr | 50 | 75 | nC | TJ = 25°C, di/dt = 100A/μs | 2 | |
| Reverse Recovery Charge | Qrr | 67 | 100 | nC | TJ = 125°C, di/dt = 100A/μs | 2 | |
| Single Pulse Avalanche Energy (thermally limited) | EAS | 300 | mJ | Limited by TJmax, starting TJ = 25°C, L = 0.033mH, RG = 25Ω, IAS = 102A, VGS = 10V | 1 | ||
| Repetitive Avalanche Energy | EAR | 16 | mJ | Repetitive rating; pulse width limited by max. junction temperature | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) at TC = 25°C | ID | 170 | A | VGS @ 10V (Silicon Limited), TC = 25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) at TC = 100°C | ID | 120 | A | VGS @ 10V (Silicon Limited), TC = 100°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID | 120 | A | VGS @ 10V (Wire Bond Limited) | 1 | ||
| Pulsed Drain Current | IDM | 670 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 300 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 2 | W/°C | 1 | ||||
| Peak Diode Recovery dv/dt | dv/dt | 16 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | 10 seconds, 1.6mm from case | 1 | |||
| Mounting Torque | 10 | lb in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N m | 6-32 or M3 screw | 1 | |||
| Junction-to-Case | RθJC | 0.5 | °C/W | 1 | |||
| Case-to-Sink, Flat Greased Surface, TO-220 | RθCS | 0.5 | °C/W | Flat greased surface, TO-220 | 1 | ||
| Junction-to-Ambient, TO-220 | RθJA | 62 | °C/W | TO-220 | 1 |
CAD (KiCad official)
- Symbol:
IRFB3207ZPbF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irfb3207zpbf-etched.step/irfb3207zpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb3207zpbf.step/irfb3207zpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (12 pp, sha256
5731d915e2638592, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).