component
IRFB11N50APBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
IRFB11N50APBF
Vishay Intertech · MOSFETs · TO-220AB
IRFB11N50APBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is limited to ±30 V, and the gate threshold VGS(th) is 2.0 to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain terminal, electrically connected to the mounting tab; drain-source voltage is rated 500 V and continuous drain current is 11 A at TC = 25 °C. |
| 3 | S | passive | Source terminal, the reference for gate drive and the body diode; continuous source-drain diode current IS is 11 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 500 | V | 1 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous drain current | ID | 11 | A | TC = 25 °C | 1 | ||
| Continuous drain current | ID | 7 | A | TC = 100 °C | 1 | ||
| Pulsed drain current | IDM | 44 | A | Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 | ||
| Linear derating factor | 1.3 | W/°C | 1 | ||||
| Single pulse avalanche energy | EAS | 275 | mJ | Starting TJ = 25 °C, L = 4.5 mH, RG = 25 Ω, IAS = 11 A (see fig. 12) | 1 | ||
| Repetitive avalanche current | IAR | 11 | A | Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 | ||
| Repetitive avalanche energy | EAR | 17 | mJ | Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 | ||
| Maximum power dissipation | PD | 170 | W | TC = 25 °C | 1 | ||
| Peak diode recovery dV/dt | dV/dt | 6.9 | V/ns | ISD ≤ 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 300 | °C | For 10 s; 1.6 mm from case | 1 | |||
| Mounting torque, 6-32 or M3 screw | 10 | lbf·in | 1 | ||||
| Mounting torque, 6-32 or M3 screw | 1.1 | N·m | 1 | ||||
| Maximum junction-to-ambient thermal resistance | RthJA | 62 | °C/W | 2 | |||
| Maximum junction-to-case (drain) thermal resistance | RthJC | 0.75 | °C/W | 2 | |||
| Drain-source breakdown voltage | VDS | 500 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS = ±30 V | 2 | |
| Zero gate voltage drain current | IDSS | 25 | µA | VDS = 500 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 250 | µA | VDS = 400 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.52 | Ω | VGS = 10 V, ID = 6.6 A; pulse width ≤ 300 µs, duty cycle ≤ 2 % | 2 | ||
| Forward transconductance | gfs | 6.1 | S | VDS = 50 V, ID = 6.6 A | 2 | ||
| Gate input resistance | Rg | 0.5 | 3.2 | Ω | f = 1 MHz, open drain | 2 | |
| Total gate charge | Qg | 52 | nC | VGS = 10 V, ID = 11 A, VDS = 400 V; see fig. 6 and 13 b | 2 | ||
| Gate-source charge | Qgs | 13 | nC | 2 | |||
| Gate-drain charge | Qgd | 18 | nC | 2 | |||
| Continuous source-drain diode current | IS | 11 | A | 2 | |||
| Pulsed diode forward current | ISM | 44 | A | 2 | |||
| Body diode voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 11 A, VGS = 0 V | 2 | ||
| Body diode reverse recovery time | trr | 510 | 770 | ns | TJ = 25 °C, IF = 11 A, dI/dt = 100 A/µs | 2 | |
| Body diode reverse recovery charge | Qrr | 3.4 | 5.1 | µC | 2 | ||
| Case-to-sink, flat, greased surface thermal resistance | RthCS | 0.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRFB11N50APBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irfb11n50apbf-etched.step/irfb11n50apbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb11n50apbf.step/irfb11n50apbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
b1dbc0d8b9f9fafd, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFB11N50APBF
**Vishay Intertech** · MOSFETs · TO-220AB
IRFB11N50APBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is limited to ±30 V, and the gate threshold VGS(th) is 2.0 to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain terminal, electrically connected to the mounting tab; drain-source voltage is rated 500 V and continuous drain current is 11 A at TC = 25 °C. |
| 3 | S | passive | Source terminal, the reference for gate drive and the body diode; continuous source-drain diode current IS is 11 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 500 | V | | 1 |
| Gate-source voltage | VGS | -30 | | 30 | V | | 1 |
| Continuous drain current | ID | | | 11 | A | TC = 25 °C | 1 |
| Continuous drain current | ID | | | 7 | A | TC = 100 °C | 1 |
| Pulsed drain current | IDM | | | 44 | A | Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 |
| Linear derating factor | | | | 1.3 | W/°C | | 1 |
| Single pulse avalanche energy | EAS | | | 275 | mJ | Starting TJ = 25 °C, L = 4.5 mH, RG = 25 Ω, IAS = 11 A (see fig. 12) | 1 |
| Repetitive avalanche current | IAR | | | 11 | A | Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 |
| Repetitive avalanche energy | EAR | | | 17 | mJ | Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 |
| Maximum power dissipation | PD | | | 170 | W | TC = 25 °C | 1 |
| Peak diode recovery dV/dt | dV/dt | | | 6.9 | V/ns | ISD ≤ 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering recommendations (peak temperature) | | | | 300 | °C | For 10 s; 1.6 mm from case | 1 |
| Mounting torque, 6-32 or M3 screw | | | | 10 | lbf·in | | 1 |
| Mounting torque, 6-32 or M3 screw | | | | 1.1 | N·m | | 1 |
| Maximum junction-to-ambient thermal resistance | RthJA | | | 62 | °C/W | | 2 |
| Maximum junction-to-case (drain) thermal resistance | RthJC | | | 0.75 | °C/W | | 2 |
| Drain-source breakdown voltage | VDS | 500 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-source threshold voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-source leakage | IGSS | -100 | | 100 | nA | VGS = ±30 V | 2 |
| Zero gate voltage drain current | IDSS | | | 25 | µA | VDS = 500 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS | | | 250 | µA | VDS = 400 V, VGS = 0 V, TJ = 150 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | | 0.52 | Ω | VGS = 10 V, ID = 6.6 A; pulse width ≤ 300 µs, duty cycle ≤ 2 % | 2 |
| Forward transconductance | gfs | 6.1 | | | S | VDS = 50 V, ID = 6.6 A | 2 |
| Gate input resistance | Rg | 0.5 | | 3.2 | Ω | f = 1 MHz, open drain | 2 |
| Total gate charge | Qg | | | 52 | nC | VGS = 10 V, ID = 11 A, VDS = 400 V; see fig. 6 and 13 b | 2 |
| Gate-source charge | Qgs | | | 13 | nC | | 2 |
| Gate-drain charge | Qgd | | | 18 | nC | | 2 |
| Continuous source-drain diode current | IS | | | 11 | A | | 2 |
| Pulsed diode forward current | ISM | | | 44 | A | | 2 |
| Body diode voltage | VSD | | | 1.5 | V | TJ = 25 °C, IS = 11 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr | | 510 | 770 | ns | TJ = 25 °C, IF = 11 A, dI/dt = 100 A/µs | 2 |
| Body diode reverse recovery charge | Qrr | | 3.4 | 5.1 | µC | | 2 |
| Case-to-sink, flat, greased surface thermal resistance | RthCS | | 0.5 | | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `IRFB11N50APBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irfb11n50apbf-etched.step` / `irfb11n50apbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb11n50apbf.step` / `irfb11n50apbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590454767538368512) (8 pp, sha256 `b1dbc0d8b9f9fafd`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfb11n50apbf-datasheet.pdf)