component
IRF9Z34NPBF-JSM
Public Made by Adomby adom
JSMSEMI MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| docs | 12d ago |
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| irf9z34npbf-jsm-etched.glb | 12d ago |
| irf9z34npbf-jsm-etched.step | 12d ago |
| irf9z34npbf-jsm-hero.glb | 12d ago |
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| page.json | 12d ago |
| README.md | 12d ago |
IRF9Z34NPBF-JSM
JSMSEMI · MOSFETs · TO-220AB
IRF9Z34NPBF-JSM from JSMSEMI, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET, with gate-source voltage VGS rated at ±20 V. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET, rated for drain-source voltage VDSS of -60 V and drain current ID of -20 A at Tc=25℃. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives no source-specific rating beyond the device limits. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | -70 | V | VGS=0V ID=-250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-60V VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | -5 | μA | VDS=-60V VGS=0V TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -0.1 | 0.1 | μA | VGS=±20V VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VDS=VGS ID=250μA | 2 |
| Static Drain-Source On-Resistance RDS(on)1 | RDS(on)1 | 87 | 92 | mΩ | VGS=-10V ID=-20A | 2 | |
| Static Drain-Source On-Resistance RDS(on)2 | RDS(on)2 | 98 | 102 | mΩ | VGS=-4.5V ID=-10A | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1.2 | V | IS=-1A VGS=0V | 2 | |
| Drain-Source Voltage | VDSS | -60 | V | Ta=25℃ | 1 | ||
| Drain Current | ID | -20 | A | Tc=25℃ | 1 | ||
| Drain Current - Pulsed | IDM | -80 | A | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Avalanche Current | IAS | 13.8 | A | 1 | |||
| Avalanche Energy | EAS | 65 | mJ | L=0.5mH | 1 | ||
| Power Dissipation | PD(Tc=25℃) | 20 | W | Tc=25℃ | 1 | ||
| Power Dissipation | PD(Tc=100℃) | 10 | W | Tc=100℃ | 1 | ||
| Junction and Storage Temperature Range | Tj, Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 30 | ℃/W | t ≤ 10s | 1 | ||
| Maximum Junction-to-Ambient Steady-State | RθJA | 60 | ℃/W | Steady-State | 1 | ||
| Maximum Junction-to-Case Steady-State | RθJC | 7.5 | ℃/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
IRF9Z34NPBF-JSM - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irf9z34npbf-jsm-etched.step/irf9z34npbf-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9z34npbf-jsm.step/irf9z34npbf-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (5 pp, sha256
324030e0aa040131, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).