component
IRF9Z14STRLPBF
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Vishay Intertech MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF9Z14STRLPBF
Vishay Intertech · MOSFETs · TO-263
IRF9Z14STRLPBF from Vishay Intertech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage of -60 V and continuous drain current of -6.7 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET, with continuous source-drain diode current rated at -6.7 A and pulsed diode forward current at -27 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -6.7 | A | VGS at -10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -4.7 | A | VGS at -10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -27 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 140 | mJ | VDD = -25 V, starting TJ = 25 °C, L = 3.6 mH, Rg = 25 Ω, IAS = -6.7 A | 1 | ||
| Avalanche Current | IAR | -6.7 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 4.3 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 43 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.7 | W | TA = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | -4.5 | V/ns | ISD ≤ -6.7 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient (PCB mounted, steady-state) | RthJA | 40 | °C/W | PCB mounted, steady-state | 2 | ||
| Maximum Junction-to-Case (Drain) | RthJC | 3.5 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -2 | -4 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -100 | μA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -500 | μA | VDS = -48 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.5 | Ω | VGS = -10 V, ID = -4.0 A | 2 | ||
| Forward Transconductance | gfs | 1.4 | S | VDS = -25 V, ID = -4.0 A | 2 | ||
| Total Gate Charge | Qg | 12 | nC | VGS = -10 V, ID = -6.7 A, VDS = -48 V | 2 | ||
| Gate-Source Charge | Qgs | 3.8 | nC | VGS = -10 V, ID = -6.7 A, VDS = -48 V | 2 | ||
| Gate-Drain Charge | Qgd | 5.1 | nC | VGS = -10 V, ID = -6.7 A, VDS = -48 V | 2 | ||
| Gate Input Resistance | Rg | 1.4 | 8.7 | Ω | f = 1 MHz, open drain | 2 | |
| Continuous Source-Drain Diode Current | IS | -6.7 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | -27 | A | 2 | |||
| Body Diode Voltage | VSD | -5.5 | V | TJ = 25 °C, IS = -6.7 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 80 | 160 | ns | TJ = 25 °C, IF = -6.7 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 96 | 190 | nC | TJ = 25 °C, IF = -6.7 A, dI/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
IRF9Z14STRLPBF - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
irf9z14strlpbf-etched.step/irf9z14strlpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9z14strlpbf.step/irf9z14strlpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
b650987460bab45b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF9Z14STRLPBF
**Vishay Intertech** · MOSFETs · TO-263
IRF9Z14STRLPBF from Vishay Intertech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage of -60 V and continuous drain current of -6.7 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET, with continuous source-drain diode current rated at -6.7 A and pulsed diode forward current at -27 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -6.7 | | | A | VGS at -10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID | -4.7 | | | A | VGS at -10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | -27 | | | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 140 | mJ | VDD = -25 V, starting TJ = 25 °C, L = 3.6 mH, Rg = 25 Ω, IAS = -6.7 A | 1 |
| Avalanche Current | IAR | -6.7 | | | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 4.3 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 43 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 3.7 | W | TA = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt | -4.5 | | | V/ns | ISD ≤ -6.7 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Maximum Junction-to-Ambient (PCB mounted, steady-state) | RthJA | | | 40 | °C/W | PCB mounted, steady-state | 2 |
| Maximum Junction-to-Case (Drain) | RthJC | | | 3.5 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | VDS | -60 | | | V | VGS = 0, ID = -250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -2 | | -4 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -100 | μA | VDS = -60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -500 | μA | VDS = -48 V, VGS = 0 V, TJ = 150 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.5 | Ω | VGS = -10 V, ID = -4.0 A | 2 |
| Forward Transconductance | gfs | 1.4 | | | S | VDS = -25 V, ID = -4.0 A | 2 |
| Total Gate Charge | Qg | | | 12 | nC | VGS = -10 V, ID = -6.7 A, VDS = -48 V | 2 |
| Gate-Source Charge | Qgs | | | 3.8 | nC | VGS = -10 V, ID = -6.7 A, VDS = -48 V | 2 |
| Gate-Drain Charge | Qgd | | | 5.1 | nC | VGS = -10 V, ID = -6.7 A, VDS = -48 V | 2 |
| Gate Input Resistance | Rg | 1.4 | | 8.7 | Ω | f = 1 MHz, open drain | 2 |
| Continuous Source-Drain Diode Current | IS | | | -6.7 | A | | 2 |
| Pulsed Diode Forward Current | ISM | | | -27 | A | | 2 |
| Body Diode Voltage | VSD | | | -5.5 | V | TJ = 25 °C, IS = -6.7 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 80 | 160 | ns | TJ = 25 °C, IF = -6.7 A, dI/dt = 100 A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 96 | 190 | nC | TJ = 25 °C, IF = -6.7 A, dI/dt = 100 A/μs | 2 |
## CAD (KiCad official)
- Symbol: `IRF9Z14STRLPBF`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `irf9z14strlpbf-etched.step` / `irf9z14strlpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf9z14strlpbf.step` / `irf9z14strlpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603165263852957696) (10 pp, sha256 `b650987460bab45b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf9z14strlpbf-datasheet.pdf)