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Ray Publish 0.1.0 6dc5b20 23d ago

IRF9540PBF

Vishay Intertech · MOSFETs · TO-220AB

IRF9540PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGS).
2 D passive Drain of the P-channel MOSFET; drain-source voltage is rated -100 V (VDS) with continuous drain current of -19 A at TC = 25 °C.
3 S passive Source of the P-channel MOSFET; the integral body diode is rated for a continuous source-drain current of -19 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -19 A VGS at -10 V, TC = 25 °C 1
Continuous Drain Current ID -13 A TC = 100 °C 1
Pulsed Drain Current IDM -72 A 1
Linear Derating Factor 1 W/°C 1
Single Pulse Avalanche Energy EAS 640 mJ 1
Repetitive Avalanche Current IAR -19 A 1
Repetitive Avalanche Energy EAR 15 mJ 1
Maximum Power Dissipation PD 150 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt -5.5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Mounting Torque 10 lbf · in 6-32 or M3 screw 1
Mounting Torque 1.1 N · m 6-32 or M3 screw 1
Drain-Source Breakdown Voltage VDS -100 V VGS = 0 V, ID = - 250 μA 2
VDS Temperature Coefficient VDS/TJ 0.087 V/°C Reference to 25 °C, ID = - 1 mA 2
Gate-Source Threshold Voltage VGS(th) -2 -4 V VDS = VGS, ID = - 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -100 μA VDS = - 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -500 μA VDS = - 80 V, VGS = 0 V, TJ = 150 °C 2
Drain-Source On-State Resistance RDS(on) 0.2 Ω VGS = - 10 V ID = - 11 A 2
Forward Transconductance gfs 6.2 S VDS = - 50 V, ID = - 11 A 2
Total Gate Charge Qg 61 nC VGS = - 10 V ID = - 19 A, VDS = - 80 V 2
Gate-Source Charge Qgs 14 nC 2
Gate-Drain Charge Qgd 29 nC 2
Continuous Source-Drain Diode Current IS -19 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Diode Forward Current ISM -72 A 2
Body Diode Voltage VSD -5 V TJ = 25 °C, IS = - 19 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 130 260 ns TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 0.35 0.7 μC 2
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2

CAD (KiCad official)

  • Symbol: IRF9540PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf9540pbf-etched.step / irf9540pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9540pbf.step / irf9540pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 e563a646398c5bfd, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF