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IRF9530NPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF9530NPBF-VB
VBsemi Elec · MOSFETs · TO-220AB
IRF9530NPBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the datasheet limits VGS to ±20 V and gives a gate threshold VGS(th) of -1 V to -2.5 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -100 V and continuous drain current ID of -18 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET, serving as the reference for the body diode, which is rated for continuous current of -18 A and pulsed current of -100 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -18 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -13 | A | TJ = 150 °C; TC = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | -100 | A | t = 300 µs | 1 | ||
| Avalanche Current | IAS | -10 | A | 1 | |||
| Single Avalanche Energy | EAS | 31 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 11.7 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.1 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient (PCB Mount) | RthJA | 60 | °C/W | PCB mount, 1 in square FR-4 | 1 | ||
| Junction-to-Case (Drain) | RthJC | 9 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | -100 | V | VDS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -250 | 250 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = -100 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -250 | µA | VDS = -100 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| On-State Drain Current | ID(on) | -18 | A | VDS = -10 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 167 | mΩ | VGS = -10 V, ID = -14 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 178 | mΩ | VGS = -4.5 V, ID = -12 A | 2 | ||
| Gate Resistance | Rg | 0.5 | 2.5 | 5 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 67 | 100 | nC | VDS = -20 V, VGS = -10 V, ID = -14 A | 2 | |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 | |
| Rise Time | tr | 11 | 20 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 42 | 63 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 | |
| Fall Time | tf | 12 | 20 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 | |
| Continuous Current (body diode) | IS | -18 | A | TC = 25 °C | 2 | ||
| Pulsed Current (body diode) | ISM | -100 | A | 2 | |||
| Forward Voltage | VSD | -0.8 | -1.5 | V | IF = -10 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 38 | 57 | ns | IF = -10 A, dI/dt = 100 A/µs | 2 | |
| Peak Reverse Recovery Current | IRM(REC) | 2.3 | 3.5 | A | IF = -10 A, dI/dt = 100 A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 40 | 60 | nC | IF = -10 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
IRF9530NPBF-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irf9530npbf-vb-etched.step/irf9530npbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9530npbf-vb.step/irf9530npbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
ae35afd116d9693f, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF9530NPBF-VB
**VBsemi Elec** · MOSFETs · TO-220AB
IRF9530NPBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the datasheet limits VGS to ±20 V and gives a gate threshold VGS(th) of -1 V to -2.5 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -100 V and continuous drain current ID of -18 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET, serving as the reference for the body diode, which is rated for continuous current of -18 A and pulsed current of -100 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | -18 | A | TJ = 150 °C; TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | -13 | A | TJ = 150 °C; TC = 70 °C | 1 |
| Pulsed Drain Current | IDM | | | -100 | A | t = 300 µs | 1 |
| Avalanche Current | IAS | | | -10 | A | | 1 |
| Single Avalanche Energy | EAS | | | 31 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 11.7 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.1 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient (PCB Mount) | RthJA | | | 60 | °C/W | PCB mount, 1 in square FR-4 | 1 |
| Junction-to-Case (Drain) | RthJC | | | 9 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | -100 | | | V | VDS = 0 V, ID = -250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -2.5 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage | IGSS | -250 | | 250 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = -60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -50 | µA | VDS = -100 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -250 | µA | VDS = -100 V, VGS = 0 V, TJ = 150 °C | 2 |
| On-State Drain Current | ID(on) | -18 | | | A | VDS = -10 V, VGS = -10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 167 | mΩ | VGS = -10 V, ID = -14 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 178 | mΩ | VGS = -4.5 V, ID = -12 A | 2 |
| Gate Resistance | Rg | 0.5 | 2.5 | 5 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 67 | 100 | nC | VDS = -20 V, VGS = -10 V, ID = -14 A | 2 |
| Turn-On Delay Time | td(on) | | 10 | 20 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 |
| Rise Time | tr | | 11 | 20 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 |
| Turn-Off Delay Time | td(off) | | 42 | 63 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 |
| Fall Time | tf | | 12 | 20 | ns | VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 | 2 |
| Continuous Current (body diode) | IS | | | -18 | A | TC = 25 °C | 2 |
| Pulsed Current (body diode) | ISM | | | -100 | A | | 2 |
| Forward Voltage | VSD | | -0.8 | -1.5 | V | IF = -10 A, VGS = 0 V | 2 |
| Reverse Recovery Time | trr | | 38 | 57 | ns | IF = -10 A, dI/dt = 100 A/µs | 2 |
| Peak Reverse Recovery Current | IRM(REC) | | 2.3 | 3.5 | A | IF = -10 A, dI/dt = 100 A/µs | 2 |
| Reverse Recovery Charge | Qrr | | 40 | 60 | nC | IF = -10 A, dI/dt = 100 A/µs | 2 |
## CAD (KiCad official)
- Symbol: `IRF9530NPBF-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irf9530npbf-vb-etched.step` / `irf9530npbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf9530npbf-vb.step` / `irf9530npbf-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609119997973180416) (7 pp, sha256 `ae35afd116d9693f`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf9530npbf-vb-datasheet.pdf)