IRF9520STRRPBF-VB

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  "version": "0.1.0",
  "type": "component",
  "description": "VBsemi Elec MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
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  "component": {
    "mpn": "IRF9520STRRPBF-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TO-263",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/a1b6a979b856b25fbfbce2ee33119932.pdf",
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    "distributor_links": {
      "lcsc": "C47993803"
    },
    "distributor_check": {
      "checked_at": "2026-10-31T02:42:45Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
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      "mouser": {
        "pn": null,
        "status": "no match"
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    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of -1 to -3.0 V at ID = -250 µA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, rated for VDS of -100 V and continuous ID of -12 A at TC = 25 °C; the drain is also the case/tab (RthJC given as junction-to-case (drain), 3 °C/W)."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET, with a body-diode continuous current IS of -36 A and a forward voltage VSD of -0.8 V typical (-1.5 V max) at IF = -10 A."
      }
    ],
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        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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