component
IRF9510PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF9510PBF
Vishay Intertech · MOSFETs · TO-220AB
IRF9510PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a gate-source voltage of ±20 V (VGS) per the absolute maximum ratings. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for a drain-source voltage of -100 V (VDS); the TO-220AB tab is also electrically the drain (RthJC is specified junction-to-case, drain). |
| 3 | S | passive | Source of the P-channel MOSFET, which carries the body diode with a continuous source-drain diode current IS of -4.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | VDS | -100 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -2 | -4 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | -100 | μA | VDS = -100 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current (TJ = 150 °C) | IDSS | -500 | μA | VDS = -80 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 1.2 | Ω | VGS = -10 V, ID = -2.4 A | 2 | ||
| Forward transconductance | gfs | 1 | S | VDS = -50 V, ID = -2.4 A | 2 | ||
| Total gate charge | Qg | 8.7 | nC | VGS = -10 V, ID = -4.0 A, VDS = -80 V | 2 | ||
| Gate-source charge | Qgs | 2.2 | nC | VGS = -10 V, ID = -4.0 A, VDS = -80 V | 2 | ||
| Gate-drain charge | Qgd | 4.1 | nC | VGS = -10 V, ID = -4.0 A, VDS = -80 V | 2 | ||
| Gate input resistance | Rg | 1.5 | 7.9 | Ω | f = 1 MHz, open drain | 2 | |
| Continuous source-drain diode current | IS | -4 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 | ||
| Pulsed diode forward current | ISM | -16 | A | 2 | |||
| Body diode voltage | VSD | -5.5 | V | TJ = 25 °C, IS = -4.0 A, VGS = 0 V | 2 | ||
| Body diode reverse recovery time | trr | 82 | 160 | ns | TJ = 25 °C, IF = -4.0 A, dI/dt = 100 A/μs | 2 | |
| Body diode reverse recovery charge | Qrr | 0.15 | 0.3 | μC | 2 | ||
| Drain-source voltage | VDS | -100 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current, TC = 25 °C | ID | -4 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous drain current, TC = 100 °C | ID | -2.8 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed drain current | IDM | -16 | A | Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) | 1 | ||
| Single pulse avalanche energy | EAS | 200 | mJ | VDD = -25 V, starting TJ = 25 °C, L = 18 mH, Rg = 25 Ω, IAS = -4.0 A | 1 | ||
| Repetitive avalanche current | IAR | -4 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Repetitive avalanche energy | EAR | 4.3 | mJ | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Maximum power dissipation | PD | 43 | W | TC = 25 °C | 1 | ||
| Peak diode recovery dV/dt | dV/dt | -5.5 | V/ns | ISD ≤ -4.0 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 300 | °C | For 10 s, 1.6 mm from case | 1 | |||
| Mounting torque | 10 | lbf · in | 6-32 or M3 screw | 1 | |||
| Mounting torque | 1.1 | N · m | 6-32 or M3 screw | 1 | |||
| Maximum junction-to-ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum junction-to-case (drain) | RthJC | 3.5 | °C/W | 2 | |||
| Case-to-sink, flat, greased surface | RthCS | 0.5 | °C/W | 2 | |||
| VDS temperature coefficient | ΔVDS/TJ | 0.091 | V/°C | Reference to 25 °C, ID = -1 mA | 2 |
CAD (KiCad official)
- Symbol:
IRF9510PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irf9510pbf-etched.step/irf9510pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9510pbf.step/irf9510pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
508c0f0826c19d3c, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).