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IRF9389PBF-HXY

Public Made by Adom

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

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IRF9389PBF-HXY

HXY MOSFET · MOSFETs · SOP-8

IRF9389PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (taken as the N-channel device, VDS 30V, ID 7A).
2 G1 input Gate of MOSFET 1 (taken as the N-channel device), with VGS rated ±20V.
3 S2 passive Source of MOSFET 2 (taken as the P-channel device, VDS -30V, ID -8.5A).
4 G2 input Gate of MOSFET 2 (taken as the P-channel device), with VGS rated ±20V.
5 D2 passive Drain of MOSFET 2 (taken as the P-channel device), tied to pin 6.
6 D2 passive Drain of MOSFET 2 (taken as the P-channel device), tied to pin 5.
7 D1 passive Drain of MOSFET 1 (taken as the N-channel device), tied to pin 8.
8 D1 passive Drain of MOSFET 1 (taken as the N-channel device), tied to pin 7.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
N-Static Drain-Source On-Resistance RDS(ON) 18 25 mΩ VGS=10V, ID=6A 2
N-Static Drain-Source On-Resistance RDS(ON) 25 31 mΩ VGS=4.5V, ID=5A 2
N-Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 2
N-Drain-Source Leakage Current IDSS 1 uA VDS=30V, VGS=0V, TJ=25℃ 2
N-Drain-Source Leakage Current IDSS 5 uA VDS=30V, VGS=0V, TJ=55℃ 2
N-Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
N-Single Pulse Avalanche Energy EAS 16 mJ VDD=25V, L=0.1mH, IAS=10A 2
N-Continuous Source Current IS 7 A VG=VD=0V, Force Current 2
N-Pulsed Source Current ISM 20 A VG=VD=0V, Force Current 2
N-Diode Forward Voltage VSD 1.2 V VGS=0V, IS=5A, TJ=25℃ 2
P-Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID=-250μA 3
P-Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V, VGS=0V 3
P-Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
P-Gate Threshold Voltage VGS(th) -1 -1.5 -2.5 V VDS=VGS, ID=-250μA 3
P-Static Drain-Source On-Resistance RDS(on) 26 35 mΩ VGS=-10V, ID=-7A 3
P-Static Drain-Source On-Resistance RDS(on) 38 54 mΩ VGS=-4.5V, ID=-4A 3
P-Maximum Continuous Diode Forward Current IS -8.5 A 3
P-Maximum Pulsed Diode Forward Current ISM -28 A 3
P-Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS=-7A 3
N-Drain-Source Voltage VDS 30 V TC=25℃ 1
P-Drain-Source Voltage VDS -30 V TC=25℃ 1
N-Gate-Source Voltage VGS -20 20 V TC=25℃ 1
P-Gate-Source Voltage VGS -20 20 V TC=25℃ 1
N-Continuous Drain Current ID@TA=25℃ 7 A VGS @ 10V 1
P-Continuous Drain Current ID@TA=25℃ -8.5 A VGS @ 10V 1
N-Continuous Drain Current ID@TA=100℃ 6 A VGS @ 10V 1
P-Continuous Drain Current ID@TA=100℃ -4.6 A VGS @ 10V 1
N-Pulsed Drain Current IDM 20 A 1
P-Pulsed Drain Current IDM -28 A 1
N-Single Pulse Avalanche Energy EAS 72 mJ 1
P-Single Pulse Avalanche Energy EAS 62 mJ 1
N-Avalanche Current IAS 21 A 1
P-Avalanche Current IAS -19 A 1
N-Total Power Dissipation PD@TA=25℃ 2.5 W 1
P-Total Power Dissipation PD@TA=25℃ 3.08 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 45 ℃/W 1
Thermal Resistance Junction-Case RθJC 30 ℃/W 1
N-BVDSS Temperature Coefficient △BVDSS/△TJ 0.034 V/℃ Reference to 25℃, ID=1mA 2
N-VGS(th) Temperature Coefficient △VGS(th) -5.8 mV/℃ VGS=VDS, ID=250uA 2
N-Forward Transconductance gfs 10 S VDS=15V, ID=5A 2
N-Gate Resistance Rg 2.5 Ω VDS=24V, VGS=0V, f=1MHz 2
N-Total Gate Charge (4.5V) Qg 7.2 nC VDS=20V, VGS=4.5V, ID=6A 2
N-Input Capacitance Ciss 370 pF VDS=25V, VGS=0V, f=1MHz 2
P-Input Capacitance Ciss 982 pF VDS=-15V, VGS=0V, f=1.0MHz 3
P-Total Gate Charge Qg 10 nC VDS=-15V, ID=-4A, VGS=-10V 3

CAD (KiCad official)

  • Symbol: IRF9389PBF-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf9389pbf-hxy-etched.step / irf9389pbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9389pbf-hxy.step / irf9389pbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 aaaa3e46af1b279c, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF