component
IRF9362TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF9362TRPBF
Infineon Technologies · MOSFETs · SO-8
IRF9362TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel, VDS -30 V, ID -8.0 A at TA = 25°C). |
| 2 | G1 | input | Gate of MOSFET 1; VGS rated ±20 V max, threshold -1.3 to -2.4 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, VDS -30 V, ID -8.0 A at TA = 25°C). |
| 4 | G2 | input | Gate of MOSFET 2; VGS rated ±20 V max, threshold -1.3 to -2.4 V. |
| 5 | D2 | passive | Drain of MOSFET 2; VDS -30 V max, pulsed drain current -64 A. |
| 6 | D2 | passive | Drain of MOSFET 2, internally common with pin 5; VDS -30 V max. |
| 7 | D1 | passive | Drain of MOSFET 1; VDS -30 V max, pulsed drain current -64 A. |
| 8 | D1 | passive | Drain of MOSFET 1, internally common with pin 7; VDS -30 V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -8 | A | TA = 25°C, VGS @ -10V | 1 | ||
| Continuous Drain Current | ID | -6.4 | A | TA = 70°C, VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -64 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 | ||
| Power Dissipation | PD | 2 | W | TA = 25°C | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 0.016 | W/°C | 1 | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V, ID = -250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 17 | 21 | mΩ | VGS = -10V, ID = -8.0A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 25.7 | 32 | mΩ | VGS = -4.5V, ID = -6.4A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.3 | -1.8 | -2.4 | V | VDS = VGS, ID = -25µA | 2 |
| Drain-to-Source Leakage Current | IDSS | -1 | µA | VDS = -24V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -150 | µA | VDS = -24V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Forward Transconductance | gfs | 12 | S | VDS = -10V, ID = -6.4A | 2 | ||
| Total Gate Charge | Qg | 26 | 39 | nC | 2 | ||
| Continuous Source Current (Body Diode) | IS | -2 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | -64 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | TJ = 25°C, IS = -2.0A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 32 | 48 | ns | TJ = 25°C, IF = -2.0A, VDD = -24V, di/dt = 100/µs | 2 | |
| Reverse Recovery Charge | Qrr | 20 | 30 | nC | TJ = 25°C, IF = -2.0A, VDD = -24V, di/dt = 100/µs | 2 | |
| Single Pulse Avalanche Energy | EAS | 94 | mJ | Starting TJ = 25°C, L = 4.6mH, RG = 25Ω, IAS = -6.4A | 2 | ||
| Avalanche Current | IAR | -6.4 | A | 2 | |||
| Junction-to-Drain Lead Thermal Resistance | RθJL | 20 | °C/W | 2 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRF9362TRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf9362trpbf-etched.step/irf9362trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9362trpbf.step/irf9362trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
a848a688d8e88e53, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF9362TRPBF
**Infineon Technologies** · MOSFETs · SO-8
IRF9362TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel, VDS -30 V, ID -8.0 A at TA = 25°C). |
| 2 | G1 | input | Gate of MOSFET 1; VGS rated ±20 V max, threshold -1.3 to -2.4 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, VDS -30 V, ID -8.0 A at TA = 25°C). |
| 4 | G2 | input | Gate of MOSFET 2; VGS rated ±20 V max, threshold -1.3 to -2.4 V. |
| 5 | D2 | passive | Drain of MOSFET 2; VDS -30 V max, pulsed drain current -64 A. |
| 6 | D2 | passive | Drain of MOSFET 2, internally common with pin 5; VDS -30 V max. |
| 7 | D1 | passive | Drain of MOSFET 1; VDS -30 V max, pulsed drain current -64 A. |
| 8 | D1 | passive | Drain of MOSFET 1, internally common with pin 7; VDS -30 V max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | -30 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | -8 | A | TA = 25°C, VGS @ -10V | 1 |
| Continuous Drain Current | ID | | | -6.4 | A | TA = 70°C, VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | | | -64 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 |
| Power Dissipation | PD | | | 2 | W | TA = 25°C | 1 |
| Power Dissipation | PD | | | 1.3 | W | TA = 70°C | 1 |
| Linear Derating Factor | | | | 0.016 | W/°C | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS = 0V, ID = -250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 17 | 21 | mΩ | VGS = -10V, ID = -8.0A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 25.7 | 32 | mΩ | VGS = -4.5V, ID = -6.4A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.3 | -1.8 | -2.4 | V | VDS = VGS, ID = -25µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | -1 | µA | VDS = -24V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | -150 | µA | VDS = -24V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Forward Transconductance | gfs | 12 | | | S | VDS = -10V, ID = -6.4A | 2 |
| Total Gate Charge | Qg | | 26 | 39 | nC | | 2 |
| Continuous Source Current (Body Diode) | IS | | | -2 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | -64 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | TJ = 25°C, IS = -2.0A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 32 | 48 | ns | TJ = 25°C, IF = -2.0A, VDD = -24V, di/dt = 100/µs | 2 |
| Reverse Recovery Charge | Qrr | | 20 | 30 | nC | TJ = 25°C, IF = -2.0A, VDD = -24V, di/dt = 100/µs | 2 |
| Single Pulse Avalanche Energy | EAS | | | 94 | mJ | Starting TJ = 25°C, L = 4.6mH, RG = 25Ω, IAS = -6.4A | 2 |
| Avalanche Current | IAR | | | -6.4 | A | | 2 |
| Junction-to-Drain Lead Thermal Resistance | RθJL | | | 20 | °C/W | | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62.5 | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `IRF9362TRPBF`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf9362trpbf-etched.step` / `irf9362trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf9362trpbf.step` / `irf9362trpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590239611407798272) (9 pp, sha256 `a848a688d8e88e53`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf9362trpbf-datasheet.pdf)