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IRF9358PBF-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF9358PBF-HXY

HXY MOSFET · MOSFETs · SOP-8

IRF9358PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the first P-channel MOSFET; the device is rated VDS = -30 V and ID = -8.5 A continuous (page 1).
2 G1 input Gate of the first P-channel MOSFET; VGS is rated ±20 V, with threshold VGS(th) between -1.0 V and -2.5 V (pages 1-2).
3 S2 passive Source of the second P-channel MOSFET; the device is rated VDS = -30 V and ID = -8.5 A continuous (page 1).
4 G2 input Gate of the second P-channel MOSFET; VGS is rated ±20 V, with threshold VGS(th) between -1.0 V and -2.5 V (pages 1-2).
5 D2 passive Drain of the second P-channel MOSFET; the device is rated VDS = -30 V and ID = -8.5 A continuous (page 1).
6 D2 passive Drain of the second P-channel MOSFET; the device is rated VDS = -30 V and ID = -8.5 A continuous (page 1).
7 D1 passive Drain of the first P-channel MOSFET; the device is rated VDS = -30 V and ID = -8.5 A continuous (page 1).
8 D1 passive Drain of the first P-channel MOSFET; the device is rated VDS = -30 V and ID = -8.5 A continuous (page 1).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -6.5 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -26 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -30 V TA=25°C 1
Gate-Source Voltage VGS -20 20 V TA=25°C 1
Drain Current-Continuous ID -8.5 A TA=25°C 1
Drain Current-Pulsed (Note 1) IDM -26 A TA=25°C 1
Maximum Power Dissipation PD 1.5 W TA=25°C 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 85 ℃/W 1

CAD (KiCad official)

  • Symbol: IRF9358PBF-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf9358pbf-hxy-etched.step / irf9358pbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9358pbf-hxy.step / irf9358pbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 17761e12c4819ca0, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF