component
IRF9335TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IRF9335TRPBF
Infineon Technologies · MOSFETs · SO-8
IRF9335TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; connected with pins 2 and 3, with VDS rated -30 V. |
| 2 | S | passive | Source of the P-channel MOSFET; connected with pins 1 and 3, with VDS rated -30 V. |
| 3 | S | passive | Source of the P-channel MOSFET; connected with pins 1 and 2, with VDS rated -30 V. |
| 4 | G | input | Gate of the P-channel MOSFET with VGS rated ±20 V maximum and threshold of -1.3 to -2.4 V. |
| 5 | D | passive | Drain of the MOSFET; connected with pins 6, 7 and 8, with continuous ID of -5.4 A at TA = 25°C. |
| 6 | D | passive | Drain of the MOSFET; connected with pins 5, 7 and 8, with continuous ID of -5.4 A at TA = 25°C. |
| 7 | D | passive | Drain of the MOSFET; connected with pins 5, 6 and 8, with continuous ID of -5.4 A at TA = 25°C. |
| 8 | D | passive | Drain of the MOSFET; connected with pins 5, 6 and 7, with continuous ID of -5.4 A at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5.4 | A | TA = 25°C, VGS = -10V | 1 | ||
| Continuous Drain Current | ID | -4.3 | A | TA = 70°C, VGS = -10V | 1 | ||
| Pulsed Drain Current | IDM | -43 | A | 1 | |||
| Power Dissipation | PD | 2.5 | W | TA = 25°C | 1 | ||
| Power Dissipation | PD | 1.6 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V, ID = -250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 48 | 59 | mΩ | VGS = -10V, ID = -5.4A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 83 | 110 | mΩ | VGS = -4.5V, ID = -4.3A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.3 | -1.8 | -2.4 | V | VDS = VGS, ID = -10µA | 2 |
| Drain-to-Source Leakage Current | IDSS | -1 | µA | VDS = -24V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -150 | µA | VDS = -24V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Forward Transconductance | gfs | 5.4 | S | VDS = -10V, ID = -4.3A | 2 | ||
| Total Gate Charge | Qg | 9.1 | 14 | nC | 2 | ||
| Single Pulse Avalanche Energy | EAS | 98 | mJ | 2 | |||
| Avalanche Current | IAR | -4.3 | A | 2 | |||
| Continuous Source Current (Body Diode) | IS | -2.5 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | -43 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | TJ = 25°C, IS = -2.5A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 14 | 21 | ns | TJ = 25°C, IF = -2.5A, VDD = -24V, di/dt = 100/µs | 2 | |
| Reverse Recovery Charge | Qrr | 7.4 | 11 | nC | TJ = 25°C, IF = -2.5A, VDD = -24V, di/dt = 100/µs | 2 | |
| Junction-to-Drain Lead Thermal Resistance | RθJL | 20 | °C/W | 2 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 50 | °C/W | 2 | |||
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ | 0.019 | V/°C | Reference to 25°C, ID = -1mA | 2 | ||
| Gate Threshold Voltage Coefficient | ΔVGS(th)/ΔTJ | -5.1 | mV/°C | 2 |
CAD (KiCad official)
- Symbol:
IRF9335TRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf9335trpbf-etched.step/irf9335trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9335trpbf.step/irf9335trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
4e26bb7c8d52f83d, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).