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IRF9335TRPBF

Infineon Technologies · MOSFETs · SO-8

IRF9335TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; connected with pins 2 and 3, with VDS rated -30 V.
2 S passive Source of the P-channel MOSFET; connected with pins 1 and 3, with VDS rated -30 V.
3 S passive Source of the P-channel MOSFET; connected with pins 1 and 2, with VDS rated -30 V.
4 G input Gate of the P-channel MOSFET with VGS rated ±20 V maximum and threshold of -1.3 to -2.4 V.
5 D passive Drain of the MOSFET; connected with pins 6, 7 and 8, with continuous ID of -5.4 A at TA = 25°C.
6 D passive Drain of the MOSFET; connected with pins 5, 7 and 8, with continuous ID of -5.4 A at TA = 25°C.
7 D passive Drain of the MOSFET; connected with pins 5, 6 and 8, with continuous ID of -5.4 A at TA = 25°C.
8 D passive Drain of the MOSFET; connected with pins 5, 6 and 7, with continuous ID of -5.4 A at TA = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS -30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -5.4 A TA = 25°C, VGS = -10V 1
Continuous Drain Current ID -4.3 A TA = 70°C, VGS = -10V 1
Pulsed Drain Current IDM -43 A 1
Power Dissipation PD 2.5 W TA = 25°C 1
Power Dissipation PD 1.6 W TA = 70°C 1
Linear Derating Factor 0.02 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-to-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250µA 2
Static Drain-to-Source On-Resistance RDS(on) 48 59 mΩ VGS = -10V, ID = -5.4A 2
Static Drain-to-Source On-Resistance RDS(on) 83 110 mΩ VGS = -4.5V, ID = -4.3A 2
Gate Threshold Voltage VGS(th) -1.3 -1.8 -2.4 V VDS = VGS, ID = -10µA 2
Drain-to-Source Leakage Current IDSS -1 µA VDS = -24V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS -150 µA VDS = -24V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS -100 nA VGS = -20V 2
Gate-to-Source Reverse Leakage IGSS 100 nA VGS = 20V 2
Forward Transconductance gfs 5.4 S VDS = -10V, ID = -4.3A 2
Total Gate Charge Qg 9.1 14 nC 2
Single Pulse Avalanche Energy EAS 98 mJ 2
Avalanche Current IAR -4.3 A 2
Continuous Source Current (Body Diode) IS -2.5 A 2
Pulsed Source Current (Body Diode) ISM -43 A 2
Diode Forward Voltage VSD -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V 2
Reverse Recovery Time trr 14 21 ns TJ = 25°C, IF = -2.5A, VDD = -24V, di/dt = 100/µs 2
Reverse Recovery Charge Qrr 7.4 11 nC TJ = 25°C, IF = -2.5A, VDD = -24V, di/dt = 100/µs 2
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 2
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W 2
Breakdown Voltage Temp. Coefficient ΔBVDSS/ΔTJ 0.019 V/°C Reference to 25°C, ID = -1mA 2
Gate Threshold Voltage Coefficient ΔVGS(th)/ΔTJ -5.1 mV/°C 2

CAD (KiCad official)

  • Symbol: IRF9335TRPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf9335trpbf-etched.step / irf9335trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9335trpbf.step / irf9335trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 4e26bb7c8d52f83d, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF