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IRF9335TRPBF-VB

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VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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docs irf9335trpbf-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
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irf9335trpbf-vb-etched.fit.json irf9335trpbf-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
irf9335trpbf-vb-etched.glb irf9335trpbf-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
irf9335trpbf-vb-etched.step irf9335trpbf-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
irf9335trpbf-vb.glb Publish 0.1.0 · Ray 1mo ago
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page.json irf9335trpbf-vb: specified limits as data (metadata.characteristics, 29 rows from the datasheet) · Ray 23d ago
README.md irf9335trpbf-vb: specified limits as data (metadata.characteristics, 29 rows from the datasheet) · Ray 23d ago

IRF9335TRPBF-VB

VBsemi Elec · MOSFETs · SO-8

IRF9335TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET. Pins 1, 2, and 3 are internally tied together as the Source. Continuous source current (diode conduction) IS = -2.3 A at TA = 25 °C.
2 S passive Source terminal of the P-channel MOSFET. Pins 1, 2, and 3 are internally tied together as the Source.
3 S passive Source terminal of the P-channel MOSFET. Pins 1, 2, and 3 are internally tied together as the Source.
4 G input Gate terminal of the P-channel MOSFET. Gate-Source Voltage VGS = ±20 V max; VGS(th) = -0.7 to -2.0 V (at VDS = VGS, ID = -250 µA). Gate resistance Rg ≈ 8.8 Ω, total gate charge Qg ≈ 16 nC.
5 D passive Drain terminal of the P-channel MOSFET. Pins 5, 6, 7, and 8 are internally tied together as the Drain. VDS = -30 V max; RDS(on) = 0.033 Ω at VGS = -10 V.
6 D passive Drain terminal of the P-channel MOSFET. Pins 5, 6, 7, and 8 are internally tied together as the Drain.
7 D passive Drain terminal of the P-channel MOSFET. Pins 5, 6, 7, and 8 are internally tied together as the Drain.
8 D passive Drain terminal of the P-channel MOSFET. Pins 5, 6, 7, and 8 are internally tied together as the Drain.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Ordering variants

Same part, different packaging or reel option.

  • IRF9335TRPBF-VB

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) -0.7 -2 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) -20 A VDS ≤ -10 V, VGS = -10 V 2
On-State Drain Current ID(on) -5 A VDS ≤ -5 V, VGS = -4.5 V 2
Diode Forward Voltage VSD -0.8 -1.1 V IS = -2.3 A, VGS = 0 V 2
Turn-On Delay Time td(on) 14 25 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Rise Time tr 14 25 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 42 70 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Fall Time tf 30 50 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 30 60 ns IF = -1.2 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TJ = 150 °C) ID -5.8 A TA = 25 °C, t ≤ 10 s 1
Continuous Drain Current (TJ = 150 °C) ID -4.1 A TA = 25 °C, steady state 1
Continuous Drain Current (TJ = 150 °C) ID -4.6 A TA = 70 °C, t ≤ 10 s 1
Continuous Drain Current (TJ = 150 °C) ID -3.2 A TA = 70 °C, steady state 1
Pulsed Drain Current IDM -30 A 1
Continuous Source Current (Diode Conduction) IS -2.3 A t ≤ 10 s 1
Continuous Source Current (Diode Conduction) IS -1.1 A steady state 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C, t ≤ 10 s 1
Maximum Power Dissipation PD 1.3 W TA = 25 °C, steady state 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C, t ≤ 10 s 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 40 50 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 70 95 °C/W steady state 1
Maximum Junction-to-Foot (Drain) RthJF 24 30 °C/W steady state 1

CAD (KiCad official)

  • Symbol: IRF9335TRPBF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf9335trpbf-vb-etched.step / irf9335trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9335trpbf-vb.step / irf9335trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 a9eaf95b30dda06c, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF