component
IRF9335-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF9335-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF9335-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, with drain-source voltage rated at -30V and continuous drain current of -5.1A at TA=25℃ shared across the source pins. |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally to the other source pins, with a body diode continuous forward current of -5.1A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally to the other source pins, with a pulsed drain current rating of -20.4A. |
| 4 | G | input | Gate of the P-channel MOSFET, with a gate-source voltage rating of ±20V and a gate threshold voltage of -1.0V to -2.5V at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET, with drain-source voltage rated at -30V and RDS(on) below 55mΩ at VGS=-10V. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied internally to the other drain pins, with a continuous drain current of -5.1A at TA=25℃. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied internally to the other drain pins, with a pulsed drain current of -20.4A. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied internally to the other drain pins, with total power dissipation of 2.5W at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
IRF9335-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf9335-hxy-etched.step/irf9335-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9335-hxy.step/irf9335-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
b5d9a1334dfe051d, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF9335-HXY
**HXY MOSFET** · MOSFETs · SOP-8
IRF9335-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, with drain-source voltage rated at -30V and continuous drain current of -5.1A at TA=25℃ shared across the source pins. |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally to the other source pins, with a body diode continuous forward current of -5.1A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally to the other source pins, with a pulsed drain current rating of -20.4A. |
| 4 | G | input | Gate of the P-channel MOSFET, with a gate-source voltage rating of ±20V and a gate threshold voltage of -1.0V to -2.5V at ID=-250μA. |
| 5 | D | passive | Drain of the P-channel MOSFET, with drain-source voltage rated at -30V and RDS(on) below 55mΩ at VGS=-10V. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied internally to the other drain pins, with a continuous drain current of -5.1A at TA=25℃. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied internally to the other drain pins, with a pulsed drain current of -20.4A. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied internally to the other drain pins, with total power dissipation of 2.5W at TA=25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## CAD (KiCad official)
- Symbol: `IRF9335-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf9335-hxy-etched.step` / `irf9335-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf9335-hxy.step` / `irf9335-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/irf9335-hxy-datasheet.pdf) (7 pp, sha256 `b5d9a1334dfe051d`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf9335-hxy-datasheet.pdf)