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IRF9333PBF-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF9333PBF-HXY

HXY MOSFET · MOSFETs · SOP-8

IRF9333PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied with pins 2 and 3; VDS rating is -30 V.
2 S passive Source of the P-channel MOSFET, tied with pins 1 and 3; VDS rating is -30 V.
3 S passive Source of the P-channel MOSFET, tied with pins 1 and 2; VDS rating is -30 V.
4 G input Gate of the P-channel MOSFET; VGS maximum is ±20 V and threshold is -1 V to -3 V.
5 D passive Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; ID is -11 A at TA=25℃.
6 D passive Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; ID is -11 A at TA=25℃.
7 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; ID is -11 A at TA=25℃.
8 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; ID is -11 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V Tc=25℃ unless otherwise noted; printed as -30 V (negative bound) 1
Gate-Source Voltage VGS 20 V Tc=25℃ unless otherwise noted; printed as +20 V 1
Drain Current (TA=25℃) ID -11 A ID@TA=25℃, VGS @ 10V; footnote 3 1
Drain Current (TA=70℃) ID -9.1 A ID@TA=70℃, VGS @ 10V; footnote 3 1
Pulsed Drain Current IDM -40 A Pulse width limited by max. junction temperature (footnote 1) 1
Total Power Dissipation (TA=25℃) PD 2.5 W PD@TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 50 ℃/W Footnote 3: surface mounted on 1 in² copper pad of FR4 board, t < 10s 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 12.5 16 mΩ VGS=-10V, ID=-10A 2
Static Drain-Source On-Resistance RDS(ON) 17 21 mΩ VGS=-4.5V, ID=-6A 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250uA 2
Drain-Source Leakage Current IDSS -10 uA VDS=-24V, VGS=0V 2
Gate-Source Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 28 45 nC ID=-6A, VDS=-15V, VGS=-4.5V 2
Input Capacitance Ciss 2940 4700 pF VGS=0V, VDS=-15V, f=1.0MHz 2
Gate Resistance Rg 6.2 12.4 Ω f=1.0MHz 2
Forward On Voltage VSD -1.2 V IS=-2.1A, VGS=0V 2

CAD (KiCad official)

  • Symbol: IRF9333PBF-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf9333pbf-hxy-etched.step / irf9333pbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9333pbf-hxy.step / irf9333pbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 4bacdb91444cfe96, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF