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Ray irf9321trpbf: specified limits as data (metadata.characteristics, 28 rows from the datasheet) fb98c17 24d ago

IRF9321TRPbF

Infineon Technologies · MOSFETs · SO-8

IRF9321TRPbF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied internally with pins 2 and 3.
2 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 2.
4 G input Gate; gate-to-source voltage is rated at ±20 V maximum, with a threshold of -1.3 to -2.4 V.
5 D passive Drain, tied internally with pins 6, 7 and 8; drain-to-source voltage is rated at -30 V and continuous current at -15 A (TA = 25°C).
6 D passive Drain, tied internally with pins 5, 7 and 8; drain-to-source voltage is rated at -30 V and continuous current at -15 A (TA = 25°C).
7 D passive Drain, tied internally with pins 5, 6 and 8; drain-to-source voltage is rated at -30 V and continuous current at -15 A (TA = 25°C).
8 D passive Drain, tied internally with pins 5, 6 and 7; drain-to-source voltage is rated at -30 V and continuous current at -15 A (TA = 25°C).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -15 A @ TA = 25°C, VGS @ -10V 1
Continuous Drain Current ID -12 A @ TA = 70°C, VGS @ -10V 1
Pulsed Drain Current IDM -120 A 1
Power Dissipation PD 2.5 W @ TA = 25°C 1
Power Dissipation PD 1.6 W @ TA = 70°C 1
Linear Derating Factor 0.02 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-to-Source Voltage VDS -30 V 1
Drain-to-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250µA 2
Static Drain-to-Source On-Resistance RDS(on) 5.9 7.2 mΩ VGS = -10V, ID = -15A 2
Static Drain-to-Source On-Resistance RDS(on) 9.3 11.2 mΩ VGS = -4.5V, ID = -12A 2
Gate Threshold Voltage VGS(th) -1.3 -1.8 -2.4 V VDS = VGS, ID = -50µA 2
Drain-to-Source Leakage Current IDSS -1 µA VDS = -24V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS -150 µA VDS = -24V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS -100 nA VGS = -20V 2
Gate-to-Source Reverse Leakage IGSS 100 nA VGS = 20V 2
Forward Transconductance gfs 30 S VDS = -10V, ID = -12A 2
Total Gate Charge Qg 65 98 nC 2
Diode Forward Voltage VSD -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V 2
Reverse Recovery Time trr 38 57 ns TJ = 25°C, IF = -2.5A, VDD = -24V, di/dt = 100/µs 2
Reverse Recovery Charge Qrr 24 36 nC TJ = 25°C, IF = -2.5A, VDD = -24V, di/dt = 100/µs 2
Continuous Source Current (Body Diode) IS -2.5 A 2
Pulsed Source Current (Body Diode) ISM -120 A 2
Single Pulse Avalanche Energy EAS 310 mJ 2
Avalanche Current IAR -12 A 2
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 2
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W 2

CAD (KiCad official)

  • Symbol: IRF9321TRPbF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf9321trpbf-etched.step / irf9321trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9321trpbf.step / irf9321trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 ae97fd546f237bca, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF