# IRF8736TRPBF

**Infineon Technologies** · MOSFETs · SO-8

IRF8736TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 2 | S | passive | Source terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 3 | S | passive | Source terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 4 | G | input | Gate terminal, with gate-to-source voltage limited to ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 6 | D | passive | Drain terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 7 | D | passive | Drain terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |
| 8 | D | passive | Drain terminal of the N-channel HEXFET, rated for a drain-to-source voltage of 30 V maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 3.9 | 4.8 | mΩ | VGS = 10V, ID = 18A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 5.5 | 6.8 | mΩ | VGS = 4.5V, ID = 14.4A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.35 | V | VDS = VGS, ID = 50µA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | µA | VDS = 24V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 150 | µA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | -100 |  |  | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 52 |  |  | S | VDS = 15V, ID = 14.4A | 2 |
| Total Gate Charge | Qg |  | 17 | 26 | nC | VDD = 15V, VGS = 4.5V, ID = 14.4A | 2 |
| Gate Resistance | RG |  | 1.3 | 2.2 | Ω |  | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 3.1 | A |  | 2 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 144 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | TJ = 25°C, IS = 14.4A, VGS = 0V | 2 |
| Reverse Recovery Time | trr |  | 16 | 24 | ns | TJ = 25°C, IF = 14.4A, VDD = 10V, di/dt = 300A/µs | 2 |
| Reverse Recovery Charge | Qrr |  | 19 | 29 | nC | TJ = 25°C, IF = 14.4A, VDD = 10V, di/dt = 300A/µs | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 126 | mJ |  | 2 |
| Avalanche Current | IAR |  |  | 14.4 | A |  | 2 |
| Drain-to-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current, VGS @ 10V | ID @ TA = 25°C |  |  | 18 | A | TA = 25°C | 1 |
| Continuous Drain Current, VGS @ 10V | ID @ TA = 70°C |  |  | 14.4 | A | TA = 70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 144 | A |  | 1 |
| Power Dissipation | PD @TA = 25°C |  |  | 2.5 | W | TA = 25°C | 1 |
| Power Dissipation | PD @TA = 70°C |  |  | 1.6 | W | TA = 70°C | 1 |
| Linear Derating Factor |  |  |  | 0.02 | W/°C |  | 1 |
| Operating Junction Temperature | TJ | -55 |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Junction-to-Drain Lead Thermal Resistance | RθJL |  |  | 20 | °C/W |  | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 50 | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `IRF8736TRPBF`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf8736trpbf-etched.step` / `irf8736trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf8736trpbf.step` / `irf8736trpbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586179138021699584) (9 pp, sha256 `02110c9e27ddbafe`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf8736trpbf-datasheet.pdf)