component
IRF8736TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF8736TRPBF-VB
VBsemi Elec · MOSFETs · SO-8
IRF8736TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; continuous source-drain diode current is 3.8 A at TC = 25 °C per the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; drain-source voltage rating is 30 V, so the source is referenced to the 30 V maximum drain-source limit. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives a 30 V drain-source breakdown minimum (VGS = 0 V, ID = 250 µA). |
| 4 | G | input | Gate terminal; gate-source voltage is limited to ±20 V per the absolute maximum ratings, and VGS(th) is 1.0 to 3.0 V at VDS = VGS, ID = 250 µA. |
| 5 | D | passive | Drain terminal; continuous drain current is 18 A at TC = 25 °C (15 A at TA = 25 °C with surface mounting) and pulsed drain current is 50 A. |
| 6 | D | passive | Drain terminal; drain-source voltage is 30 V and the device is rated to a junction and storage temperature range of -55 to 150 °C. |
| 7 | D | passive | Drain terminal; continuous drain current and power ratings are given for TC = 25 °C and TA = 25 °C in the absolute maximum ratings table. |
| 8 | D | passive | Drain terminal; drain-source voltage is 30 V and drain pins 5 through 8 are tied together on the SO-8 package. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 18 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current | ID | 16 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 15 | A | TA = 25 °C (notes b, c) | 1 | ||
| Continuous Drain Current | ID | 13 | A | TA = 70 °C (notes b, c) | 1 | ||
| Pulsed Drain Current | IDM | 50 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 3.8 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TA = 25 °C (notes b, c) | 1 | ||
| Single Pulse Avalanche Current | IAS | 22 | A | L = 0.1 mH | 1 | ||
| Avalanche Energy | EAS | 24 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 4.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.8 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA = 70 °C (notes b, c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 38 | 50 | °C/W | t ≤ 10 s (notes b, d) | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 22 | 28 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Ambient | RthJA | 85 | °C/W | Steady state (note d) | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.004 | Ω | VGS = 10 V, ID = 11 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.005 | Ω | VGS = 4.5 V, ID = 10 A | 2 | ||
| Gate Resistance | Rg | 0.36 | 1.8 | 3.6 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 15 | 23 | nC | VDS = 15 V, VGS = 10 V, ID = 11 A | 2 | |
| Total Gate Charge | Qg | 6.8 | 10.2 | nC | VDS = 15 V, VGS = 5 V, ID = 11 A | 2 | |
| Turn-On Delay Time | td(on) | 16 | 24 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 12 | 18 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 16 | 24 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 20 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 8 | 16 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 10 | 20 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 8 | 15 | ns | VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 9 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 15 | 30 | ns | IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 6 | 12 | nC | IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| VDS Temperature Coefficient | ΔVDS/TJ | 28 | mV/°C | ID = 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -6 | mV/°C | 2 |
CAD (KiCad official)
- Symbol:
IRF8736TRPBF-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf8736trpbf-vb-etched.step/irf8736trpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf8736trpbf-vb.step/irf8736trpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
1f56de29ece127c1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).