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IRF8734TRPBF

Public Made by Adom

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Infineon Technologies MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF8734TRPBF

Infineon Technologies · MOSFETs · SOIC-8

IRF8734TRPBF from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the HEXFET power MOSFET, rated for a 30 V drain-to-source voltage (VDSS).
2 S passive Source terminal of the HEXFET power MOSFET, rated for a 30 V drain-to-source voltage (VDSS).
3 S passive Source terminal of the HEXFET power MOSFET, rated for a 30 V drain-to-source voltage (VDSS).
4 G input Gate terminal; gate-to-source voltage is rated at ±20 V per the absolute maximum ratings.
5 D passive Drain terminal of the HEXFET power MOSFET, rated for a 30 V drain-to-source voltage (VDSS).
6 D passive Drain terminal of the HEXFET power MOSFET, rated for a 30 V drain-to-source voltage (VDSS).
7 D passive Drain terminal of the HEXFET power MOSFET, rated for a 30 V drain-to-source voltage (VDSS).
8 D passive Drain terminal of the HEXFET power MOSFET, rated for a 30 V drain-to-source voltage (VDSS).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 2.9 3.5 mΩ VGS = 10V, ID = 21A 2
Static Drain-to-Source On-Resistance RDS(on) 4.2 5.1 mΩ VGS = 4.5V, ID = 17A 2
Gate Threshold Voltage VGS(th) 1.35 1.8 2.35 V VDS = VGS, ID = 50µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 24V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 µA VDS = 24V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 85 S VDS = 15V, ID = 17A 2
Total Gate Charge Qg 20 30 nC 2
Gate Resistance RG 1.7 3.1 Ω 2
Reverse Recovery Time trr 20 30 ns TJ = 25°C, IF = 17A, VDD = 15V, di/dt = 345A/µs 2
Reverse Recovery Charge Qrr 25 38 nC TJ = 25°C, IF = 17A, VDD = 15V, di/dt = 345A/µs 2
Diode Forward Voltage VSD 1 V TJ = 25°C, IS = 17A, VGS = 0V 2
Single Pulse Avalanche Energy EAS 216 mJ Starting TJ = 25°C, L = 1.69mH, RG = 25Ω, IAS = 16A 2
Avalanche Current IAR 17 A 2
Drain-to-Source Voltage VDS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 21 A VGS @ 10V, TA = 25°C 1
Continuous Drain Current ID 17 A VGS @ 10V, TA = 70°C 1
Pulsed Drain Current IDM 168 A 1
Power Dissipation PD 2.5 W TA = 25°C 1
Power Dissipation PD 1.6 W TA = 70°C 1
Linear Derating Factor 0.02 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 1
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W When mounted on 1 inch square copper board 1

CAD (KiCad official)

  • Symbol: IRF8734TRPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: irf8734trpbf-etched.step / irf8734trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf8734trpbf.step / irf8734trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 43ded4922c8d3bc9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF