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IRF8707TR

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF8707TR

UMW · MOSFETs · SOP-8

IRF8707TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the N-channel MOSFET; pins 1, 2 and 3 are all source leads and are tied together in the datasheet pinning table.
2 S passive SOURCE terminal of the N-channel MOSFET; pins 1, 2 and 3 are all source leads and are tied together in the datasheet pinning table.
3 S passive SOURCE terminal of the N-channel MOSFET; pins 1, 2 and 3 are all source leads and are tied together in the datasheet pinning table.
4 G input GATE terminal of the MOSFET; the absolute maximum gate-to-source voltage is VGS = ±20V.
5 D passive DRAIN terminal of the N-channel MOSFET; the absolute maximum drain-to-source voltage is VDS = 30V.
6 D passive DRAIN terminal of the N-channel MOSFET; the absolute maximum drain-to-source voltage is VDS = 30V.
7 D passive DRAIN terminal of the N-channel MOSFET; the absolute maximum drain-to-source voltage is VDS = 30V.
8 D passive DRAIN terminal of the N-channel MOSFET; the absolute maximum drain-to-source voltage is VDS = 30V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1.35 1.8 2.35 V VDS=VGS, ID=25μA 3
Static Drain-to-Source On-Resistance RDS(ON) 9.3 11.9 mΩ VGS=10V, ID=11A 3
Static Drain-to-Source On-Resistance RDS(ON) 14.2 17.5 mΩ VGS=4.5V, ID=8.8A 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 150 µA VDS=24V, VGS=0V, TJ=125°C 3
Drain-Source Voltage VDS 30 V 2
Gate-to-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 11 A VGS=10V, TA=25°C 2
Continuous Drain Current ID 9.1 A VGS=10V, TA=70°C 2
Pulsed Drain Current IDM 88 A Note ①: repetitive rating, pulse width limited by max. junction temperature 2
Power Dissipation PD 2.5 W TA=25°C 2
Power Dissipation PD 1.6 W TA=70°C 2
Linear Derating Factor 0.02 W/°C 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 2
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W Note ⑤: Rθ measured at TJ ≈ 90°C 2
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W Note ④: mounted on 1 inch square copper board; note ⑤ 2

CAD (KiCad official)

  • Symbol: IRF8707TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf8707tr-etched.step / irf8707tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf8707tr.step / irf8707tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 4a5d3064fd117db1, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF