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Contents

README

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IRF840LCPBF-VB

VBsemi Elec · MOSFETs · TO-220AB

IRF840LCPBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate terminal controlling the drain-to-source channel. VGS(th) = 2.0-4.0 V, absolute maximum VGS = ±20 V. Drive with VGS = 10 V for rated RDS(on) = 0.660 Ω.
2 D passive Drain. High-voltage power terminal, VDS = 500 V max, continuous ID = 13 A at TC = 25 °C (8.1 A at TC = 100 °C), pulsed IDM = 50 A. Electrically connected to the TO-220AB mounting tab.
3 S passive Source. Low-side power terminal and anode of the integral body diode (VSD ≤ 1.5 V at IS = 14 A). Reference for VGS and VDS.
TAB D passive Mounting tab, internally connected to the Drain. Provides the primary thermal path (RthJC = 0.50 °C/W max) and is at drain potential - isolate from grounded heatsinks.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • IRF840LCPBF-VB

CAD (KiCad official)

  • Symbol: IRF840LCPBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf840lcpbf-vb-etched.step / irf840lcpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf840lcpbf-vb.step / irf840lcpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 5a220b5292951f9a, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF