component

IRF840APBF

Public Made by Adom

by adom

Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers irf840apbf: viewers · Ray 23d ago
irf840apbf-etched.glb irf840apbf: factory component page (tier=lcsc) · Ray 23d ago
irf840apbf-etched.step irf840apbf: factory component page (tier=lcsc) · Ray 23d ago
irf840apbf-hero.glb irf840apbf: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
irf840apbf-hero.overlay.json Publish 0.1.0 · Ray 23d ago
irf840apbf.glb Publish 0.1.0 · Ray 23d ago
irf840apbf.kicad_mod Publish 0.1.0 · Ray 23d ago
irf840apbf.kicad_sym Publish 0.1.0 · Ray 23d ago
irf840apbf.lbr Publish 0.1.0 · Ray 23d ago
irf840apbf.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json irf840apbf: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 17d ago
README.md irf840apbf: specified limits as data (metadata.characteristics, 33 rows from the datasheet) · Ray 17d ago

IRF840APBF

Vishay Intertech · MOSFETs · TO-220AB

IRF840APBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±30 V (VGS).
2 D passive Drain terminal; drain-source voltage is rated at 500 V (VDS) with continuous drain current of 8.0 A at TC = 25 °C.
3 S passive Source terminal; the integral body diode has a continuous source-drain current rating of 8.0 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 500 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 8 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 5.1 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 32 A 1
Linear Derating Factor 1 W/°C 1
Single Pulse Avalanche Energy EAS 510 mJ 1
Repetitive Avalanche Current IAR 8 A 1
Repetitive Avalanche Energy EAR 13 mJ 1
Maximum Power Dissipation PD 125 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Mounting Torque 10 lbf · in 6-32 or M3 screw 1
Mounting Torque 1.1 N · m 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Drain-Source Breakdown Voltage VDS 500 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 500 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.85 Ω VGS = 10 V, ID = 4.8 A 2
Forward Transconductance gfs 3.7 S VDS = 50 V, ID = 4.8 A 2
Total Gate Charge Qg 38 nC VGS = 10 V, ID = 8 A, VDS = 400 V 2
Gate-Source Charge Qgs 9 nC VGS = 10 V, ID = 8 A, VDS = 400 V 2
Gate-Drain Charge Qgd 18 nC VGS = 10 V, ID = 8 A, VDS = 400 V 2
Continuous Source-Drain Diode Current IS 8 A 2
Pulsed Diode Forward Current ISM 32 A 2
Body Diode Voltage VSD 2 V TJ = 25 °C, IS = 8 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 422 633 ns TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 2.16 3.24 μC TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs 2

CAD (KiCad official)

  • Symbol: IRF840APBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf840apbf-etched.step / irf840apbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf840apbf.step / irf840apbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 aa81820697f003a0, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF