component
IRF8313TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
IRF8313TRPBF
Infineon Technologies · MOSFETs · SO-8
IRF8313TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1; the datasheet's absolute maximum VDS is 30 V and VGS is ±20 V for the device. |
| 2 | G1 | input | Gate terminal of MOSFET 1; the datasheet gives a VGS maximum rating of ±20 V. |
| 3 | S2 | passive | Source terminal of MOSFET 2; the datasheet's absolute maximum VDS is 30 V and VGS is ±20 V for the device. |
| 4 | G2 | input | Gate terminal of MOSFET 2; the datasheet gives a VGS maximum rating of ±20 V. |
| 5 | D2 | passive | Drain terminal of MOSFET 2; the datasheet's absolute maximum VDS is 30 V for the device. |
| 6 | D2 | passive | Drain terminal of MOSFET 2; the datasheet's absolute maximum VDS is 30 V for the device. |
| 7 | D1 | passive | Drain terminal of MOSFET 1; the datasheet's absolute maximum VDS is 30 V for the device. |
| 8 | D1 | passive | Drain terminal of MOSFET 1; the datasheet's absolute maximum VDS is 30 V for the device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 12.5 | 15.5 | mΩ | VGS = 10V, ID = 9.7A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 18.6 | 21.6 | mΩ | VGS = 4.5V, ID = 8.0A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.35 | V | VDS = VGS, ID = 25μA | 2 |
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VDS = 24V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | μA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 23 | S | VDS = 15V, ID = 8.0A | 2 | ||
| Total Gate Charge | Qg | 6 | 9 | nC | VDD = 15V, VGS = 4.5V, ID = 8.0A | 2 | |
| Gate Resistance | Rg | 2.2 | 3.6 | Ω | 2 | ||
| Continuous Source Current (Body Diode) | IS | 3.1 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 82 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 46 | mJ | Starting TJ = 25°C, L = 1.43mH, RG = 25Ω, IAS = 8.0A | 2 | ||
| Avalanche Current | IAR | 8 | A | Starting TJ = 25°C, L = 1.43mH, RG = 25Ω, IAS = 8.0A | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | TJ = 25°C, IS = 8.0A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 20 | 30 | ns | TJ = 25°C, IF = 8.0A, VDD = 15V, di/dt = 100A/μs | 2 | |
| Reverse Recovery Charge | Qrr | 10 | 15 | nC | TJ = 25°C, IF = 8.0A, VDD = 15V, di/dt = 100A/μs | 2 | |
| Drain-to-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 9.7 | A | TA = 25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 8.1 | A | TA = 70°C | 1 | ||
| Pulsed Drain Current | IDM | 81 | A | 1 | |||
| Power Dissipation | PD | 2 | W | TA = 25°C | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 0.016 | W/°C | 1 | ||||
| Operating Junction Temperature | TJ | -55 | 175 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | °C | 1 | ||
| Junction-to-Drain Lead Thermal Resistance | RθJL | 42 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | °C/W | When mounted on 1 inch square copper board | 1 |
CAD (KiCad official)
- Symbol:
IRF8313TRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf8313trpbf-etched.step/irf8313trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf8313trpbf.step/irf8313trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
9fcd19c791b0bf5b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF8313TRPBF
**Infineon Technologies** · MOSFETs · SO-8
IRF8313TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1; the datasheet's absolute maximum VDS is 30 V and VGS is ±20 V for the device. |
| 2 | G1 | input | Gate terminal of MOSFET 1; the datasheet gives a VGS maximum rating of ±20 V. |
| 3 | S2 | passive | Source terminal of MOSFET 2; the datasheet's absolute maximum VDS is 30 V and VGS is ±20 V for the device. |
| 4 | G2 | input | Gate terminal of MOSFET 2; the datasheet gives a VGS maximum rating of ±20 V. |
| 5 | D2 | passive | Drain terminal of MOSFET 2; the datasheet's absolute maximum VDS is 30 V for the device. |
| 6 | D2 | passive | Drain terminal of MOSFET 2; the datasheet's absolute maximum VDS is 30 V for the device. |
| 7 | D1 | passive | Drain terminal of MOSFET 1; the datasheet's absolute maximum VDS is 30 V for the device. |
| 8 | D1 | passive | Drain terminal of MOSFET 1; the datasheet's absolute maximum VDS is 30 V for the device. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250μA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 12.5 | 15.5 | mΩ | VGS = 10V, ID = 9.7A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 18.6 | 21.6 | mΩ | VGS = 4.5V, ID = 8.0A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.35 | V | VDS = VGS, ID = 25μA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VDS = 24V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 150 | μA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 23 | | | S | VDS = 15V, ID = 8.0A | 2 |
| Total Gate Charge | Qg | | 6 | 9 | nC | VDD = 15V, VGS = 4.5V, ID = 8.0A | 2 |
| Gate Resistance | Rg | | 2.2 | 3.6 | Ω | | 2 |
| Continuous Source Current (Body Diode) | IS | | | 3.1 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 82 | A | | 2 |
| Single Pulse Avalanche Energy | EAS | | | 46 | mJ | Starting TJ = 25°C, L = 1.43mH, RG = 25Ω, IAS = 8.0A | 2 |
| Avalanche Current | IAR | | | 8 | A | Starting TJ = 25°C, L = 1.43mH, RG = 25Ω, IAS = 8.0A | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | TJ = 25°C, IS = 8.0A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 20 | 30 | ns | TJ = 25°C, IF = 8.0A, VDD = 15V, di/dt = 100A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 10 | 15 | nC | TJ = 25°C, IF = 8.0A, VDD = 15V, di/dt = 100A/μs | 2 |
| Drain-to-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current, VGS @ 10V | ID | | | 9.7 | A | TA = 25°C | 1 |
| Continuous Drain Current, VGS @ 10V | ID | | | 8.1 | A | TA = 70°C | 1 |
| Pulsed Drain Current | IDM | | | 81 | A | | 1 |
| Power Dissipation | PD | | | 2 | W | TA = 25°C | 1 |
| Power Dissipation | PD | | | 1.3 | W | TA = 70°C | 1 |
| Linear Derating Factor | | | | 0.016 | W/°C | | 1 |
| Operating Junction Temperature | TJ | -55 | | 175 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | °C | | 1 |
| Junction-to-Drain Lead Thermal Resistance | RθJL | | | 42 | °C/W | | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62.5 | °C/W | When mounted on 1 inch square copper board | 1 |
## CAD (KiCad official)
- Symbol: `IRF8313TRPBF`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf8313trpbf-etched.step` / `irf8313trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf8313trpbf.step` / `irf8313trpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879899205505024) (10 pp, sha256 `9fcd19c791b0bf5b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf8313trpbf-datasheet.pdf)