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IRF8313PBF-HXY

HXY MOSFET · MOSFETs · SOP-8

IRF8313PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 power_in Source terminal of MOSFET channel 1, with the device rated VDS = 30V and ID = 11.5A.
2 G1 input Gate of MOSFET channel 1, rated VGS of ±20V and specified for operation at gate voltages as low as 2.5V.
3 S2 power_in Source terminal of MOSFET channel 2, with the device rated VDS = 30V and ID = 11.5A.
4 G2 input Gate of MOSFET channel 2, rated VGS of ±20V and specified for operation at gate voltages as low as 2.5V.
5 D2 passive Drain terminal of MOSFET channel 2, rated VDS of 30V and ID of 11.5A.
6 D2 passive Drain terminal of MOSFET channel 2, rated VDS of 30V and ID of 11.5A.
7 D1 passive Drain terminal of MOSFET channel 1, rated VDS of 30V and ID of 11.5A.
8 D1 passive Drain terminal of MOSFET channel 1, rated VDS of 30V and ID of 11.5A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V, 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 10 13 mΩ VGS=10V, ID=10A 2
Static Drain-Source on-Resistance RDS(on) 16 22.5 mΩ VGS=4.5V, ID=5A 2
Maximum Continuous Drain to Source Diode Forward Current IS 11.5 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 72 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=18A 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID@TA=25℃ 11.5 A VGS @ 4.5V, TA=25℃ 1
Drain Current ID@TA=70℃ 7.8 A VGS @ 4.5V, TA=70℃ 1
Pulsed Drain Current IDM 42 A 1
Total Power Dissipation PD@TA=25℃ 3.2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: IRF8313PBF-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf8313pbf-hxy-etched.step / irf8313pbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf8313pbf-hxy.step / irf8313pbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 1ccfab076dc1920f, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF