component

IRF830PBF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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irf830pbf-vb-etched.step irf830pbf-vb: factory component page (tier=lcsc) · Ray 11d ago
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IRF830PBF-VB

VBsemi Elec · MOSFETs · TO-220AB

IRF830PBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input of the N-channel MOSFET, rated for VGS of ±30 V maximum with a gate threshold voltage of 2.0 V to 4.0 V.
2 D passive Drain terminal, rated for VDS of 600 V maximum and continuous drain current of 8.0 A at TC = 25 °C.
3 S passive Source terminal, with continuous source-drain body diode current of 9.2 A maximum.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IRF830PBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf830pbf-vb-etched.step / irf830pbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf830pbf-vb.step / irf830pbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 43e49ac920de3cc2, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF