component

IRF8010SPBF-VB

Public Made by Adom

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VBsemi Elec MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirf8010spbf-vbfactory-2.0.0extractor-text

Verified IRF8010SPBF-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IRF8010SPBF-VB · TO-263 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-hx3h1xdy/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ irf8010spbf-vb.kicad_sym✓ irf8010spbf-vb.kicad_mod✓ irf8010spbf-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers irf8010spbf-vb: viewers · Ray 8d ago
irf8010spbf-vb-etched.glb Publish 0.1.0 · Ray 8d ago
irf8010spbf-vb-etched.step irf8010spbf-vb: factory component page (tier=lcsc) · Ray 8d ago
irf8010spbf-vb-hero.glb irf8010spbf-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
irf8010spbf-vb-hero.overlay.json Publish 0.1.0 · Ray 8d ago
irf8010spbf-vb.glb Publish 0.1.0 · Ray 8d ago
irf8010spbf-vb.kicad_mod Publish 0.1.0 · Ray 8d ago
irf8010spbf-vb.kicad_sym Publish 0.1.0 · Ray 8d ago
irf8010spbf-vb.lbr Publish 0.1.0 · Ray 8d ago
irf8010spbf-vb.step Publish 0.1.0 · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 8d ago

IRF8010SPBF-VB

VBsemi Elec · MOSFETs · TO-263

IRF8010SPBF-VB from VBsemi Elec, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with RDS(on) specified at VGS = 10 V and 4.5 V.
2 D passive Drain (also the heat-sink tab); drain-source voltage is 100 V max, with 100 A continuous at TC = 25 °C.
3 S passive Source; continuous body-diode current is 85 A and the 100 V N-channel MOSFET has RDS(on) of 0.010 Ω at VGS = 10 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 100 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID 75 A TC = 125 °C, TJ = 150 °C 1
Pulsed Drain Current IDM 300 A 1
Avalanche Current IAS 75 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 280 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 250 W TC = 25 °C (TO-220AB and TO-263) 1
Maximum Power Dissipation PD 3.75 W TA = 25 °C (TO-263) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient RthJA 40 °C/W PCB Mount (TO-263) 1
Junction-to-Case RthJC 0.6 °C/W 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Gate-Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VDS = ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.01 Ω VGS = 10 V, ID = 30 A 2
Drain-Source On-State Resistance RDS(on) 0.023 Ω VGS = 4.5 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.03 Ω VGS = 10 V, ID = 30 A, TJ = 175 °C 2
Forward Transconductance gfs 25 S VDS = 15 V, ID = 30 A 2
Total Gate Charge Qg 105 160 nC VDS = 50 V, VGS = 10 V, ID = 85 A 2
Turn-On Delay Time td(on) 12 25 ns VDD = 50 V, RL = 0.6 Ω, ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 90 135 ns VDD = 50 V, RL = 0.6 Ω, ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 55 85 ns VDD = 50 V, RL = 0.6 Ω, ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 130 195 ns VDD = 50 V, RL = 0.6 Ω, ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 2
Continuous Source Current IS 85 A TC = 25 °C 2
Pulsed Source Current ISM 240 A TC = 25 °C 2
Forward Voltage VSD 1 1.5 V IF = 85 A, VGS = 0 V 2
Reverse Recovery Time trr 85 140 ns IF = 50 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 4.5 7 A IF = 50 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 0.17 0.35 µC IF = 50 A, dI/dt = 100 A/µs 2
Input Capacitance Ciss 6550 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 665 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 265 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate-Source Charge Qgs 17 nC VDS = 50 V, VGS = 10 V, ID = 85 A 2
Gate-Drain Charge Qgd 23 nC VDS = 50 V, VGS = 10 V, ID = 85 A 2

CAD (KiCad official)

  • Symbol: IRF8010SPBF-VB
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: irf8010spbf-vb-etched.step / irf8010spbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf8010spbf-vb.step / irf8010spbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 615626e836909869, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF