component

IRF7853TRPBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirf7853trpbffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers irf7853trpbf: viewers · Ray 17d ago
irf7853trpbf-etched.glb Publish 0.1.0 · Ray 17d ago
irf7853trpbf-etched.step irf7853trpbf: factory component page (tier=lcsc) · Ray 17d ago
irf7853trpbf-hero.glb irf7853trpbf: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
irf7853trpbf-hero.overlay.json Publish 0.1.0 · Ray 17d ago
irf7853trpbf.glb Publish 0.1.0 · Ray 17d ago
irf7853trpbf.kicad_mod Publish 0.1.0 · Ray 17d ago
irf7853trpbf.kicad_sym Publish 0.1.0 · Ray 17d ago
irf7853trpbf.lbr Publish 0.1.0 · Ray 17d ago
irf7853trpbf.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

IRF7853TRPBF

Infineon Technologies · MOSFETs · SO-8

IRF7853TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the HEXFET; the integral body diode runs source-to-drain, with a maximum pulsed source current of 66 A and continuous body-diode current of 2.3 A.
2 S passive Source terminal of the HEXFET; the integral body diode runs source-to-drain, with a maximum pulsed source current of 66 A and continuous body-diode current of 2.3 A.
3 S passive Source terminal of the HEXFET; the integral body diode runs source-to-drain, with a maximum pulsed source current of 66 A and continuous body-diode current of 2.3 A.
4 G input Gate terminal; gate-to-source voltage is rated at ±20 V maximum.
5 D passive Drain terminal; drain-to-source voltage is rated at 100 V with a continuous drain current of 8.3 A at TA = 25°C.
6 D passive Drain terminal; drain-to-source voltage is rated at 100 V with a continuous drain current of 8.3 A at TA = 25°C.
7 D passive Drain terminal; drain-to-source voltage is rated at 100 V with a continuous drain current of 8.3 A at TA = 25°C.
8 D passive Drain terminal; drain-to-source voltage is rated at 100 V with a continuous drain current of 8.3 A at TA = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 14.4 18 mΩ VGS = 10V, ID = 8.3A 2
Gate Threshold Voltage VGS(th) 3 4.9 V VDS = VGS, ID = 100µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 100V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 100V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 11 S VDS = 25V, ID = 5.0A 2
Total Gate Charge Qg 28 39 nC VGS = 10V, ID = 5.0A, VDS = 50V 2
Continuous Source Current (Body Diode) IS 2.3 A 2
Pulsed Source Current (Body Diode) ISM 66 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 5.0A, VGS = 0V 2
Reverse Recovery Time trr 45 68 ns TJ = 25°C, IF = 5.0A, VDD = 25V, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 84 130 nC TJ = 25°C, IF = 5.0A, VDD = 25V, di/dt = 100A/µs 2
Single Pulse Avalanche Energy EAS 610 mJ 2
Avalanche Current IAR 5 A 2
Continuous Drain Current, VGS @ 10V (TA = 25°C) ID 8.3 A TA = 25°C, VGS @ 10V 1
Continuous Drain Current, VGS @ 10V (TA = 70°C) ID 6.6 A TA = 70°C, VGS @ 10V 1
Pulsed Drain Current IDM 66 A 1
Maximum Power Dissipation PD 2.5 W TA = 25°C 1
Linear Derating Factor 0.02 W/°C 1
Peak Diode Recovery dv/dt dv/dt 5.1 V/ns 1
Drain-to-Source Voltage VDS 100 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 1
Junction-to-Ambient Thermal Resistance (PCB Mount) RθJA 50 °C/W PCB mount, 1 inch square copper board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: IRF7853TRPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7853trpbf-etched.step / irf7853trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7853trpbf.step / irf7853trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 e8f57d0bbf44e32c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF