component
IRF7832TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irf7832trpbf: specified limits as data (metadata.characteristics, 44 rows from the datasheet)
2 files changed
+587−1
README.md+51@@ -26,6 +26,57 @@ IRF7832TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDS | | | 30 | V | | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 20 | A | VGS @ 10V, TA = 25°C | 1 |+| Continuous Drain Current | ID | | | 16 | A | VGS @ 10V, TA = 70°C | 1 |+| Pulsed Drain Current | IDM | | | 160 | A | | 1 |+| Power Dissipation | PD | | | 2.5 | W | TA = 25°C | 1 |+| Power Dissipation | PD | | | 1.6 | W | TA = 70°C | 1 |+| Linear Derating Factor | | | | 0.02 | W/°C | | 1 |+| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 155 | °C | | 1 |+| Junction-to-Drain Lead Thermal Resistance | RθJL | | | 20 | °C/W | | 1 |+| Junction-to-Ambient Thermal Resistance | RθJA | | | 50 | °C/W | When mounted on 1 inch square copper board | 1 |+| Drain-to-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250µA | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 3.1 | 4 | mΩ | VGS = 10V, ID = 20A | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 3.7 | 4.8 | mΩ | VGS = 4.5V, ID = 16A | 2 |+| Gate Threshold Voltage | VGS(th) | 1.39 | | 2.32 | V | VDS = VGS, ID = 250µA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS = 24V, VGS = 0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 150 | µA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 |+| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |+| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |+| Forward Transconductance | gfs | 77 | | | S | VDS = 15V, ID = 16A | 2 |+| Gate Resistance | Rg | | 1.2 | 2.4 | Ω | | 2 |+| Total Gate Charge | Qg | | 34 | 51 | nC | VDS = 15V, VGS = 4.5V, ID = 16A | 2 |+| Avalanche Energy, Single Pulse | EAS | | | 260 | mJ | Starting TJ = 25°C, L = 2.0mH, RG = 25Ω, IAS = 16A | 2 |+| Avalanche Current | IAR | | | 16 | A | | 2 |+| Continuous Source Current (Body Diode) | IS | | | 3.1 | A | | 2 |+| Pulsed Source Current (Body Diode) | ISM | | | 160 | A | | 2 |+| Diode Forward Voltage | VSD | | | 1 | V | TJ = 25°C, IS = 16A, VGS = 0V | 2 |+| Reverse Recovery Time | trr | | 41 | 62 | ns | TJ = 25°C, IF = 16A, VDD = 10V, di/dt = 100A/µs | 2 |+| Reverse Recovery Charge | Qrr | | 39 | 59 | nC | TJ = 25°C, IF = 16A, VDD = 10V, di/dt = 100A/µs | 2 |+| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.023 | | V/°C | Reference to 25°C, ID = 1mA | 2 |+| Gate Threshold Voltage Coefficient | ΔVGS(th) | | 5.7 | | mV/°C | | 2 |+| Pre-Vth Gate-to-Source Charge | Qgs1 | | 8.6 | | nC | | 2 |+| Post-Vth Gate-to-Source Charge | Qgs2 | | 2.9 | | nC | | 2 |+| Gate-to-Drain Charge | Qgd | | 12 | | nC | | 2 |+| Gate Charge Overdrive | Qgodr | | 10.5 | | nC | | 2 |+| Switch Charge (Qgs2 + Qgd) | Qsw | | 14.9 | | nC | | 2 |+| Output Charge | Qoss | | 23 | | nC | VDS = 16V, VGS = 0V | 2 |+| Turn-On Delay Time | td(on) | | 12 | | ns | VDD = 15V, VGS = 4.5V, ID = 16A | 2 |+| Rise Time | tr | | 6.7 | | ns | VDD = 15V, VGS = 4.5V, ID = 16A | 2 |+| Turn-Off Delay Time | td(off) | | 21 | | ns | VDD = 15V, VGS = 4.5V, ID = 16A | 2 |+| Fall Time | tf | | 13 | | ns | VDD = 15V, VGS = 4.5V, ID = 16A | 2 |+| Input Capacitance | Ciss | | 4310 | | pF | VGS = 0V, VDS = 15V, ƒ = 1.0MHz | 2 |+| Output Capacitance | Coss | | 990 | | pF | VGS = 0V, VDS = 15V, ƒ = 1.0MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 450 | | pF | VGS = 0V, VDS = 15V, ƒ = 1.0MHz | 2 |+ ## CAD (KiCad official) - Symbol: `IRF7832TRPBF`
page.json+536−1@@ -180,6 +180,541 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "be0e3e48bc4396aa",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VGS @ 10V, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "VGS @ 10V, TA = 70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TA = 70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 0.02,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 155,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Drain Lead Thermal Resistance",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "When mounted on 1 inch square copper board",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 3.1,+ "max": 4,+ "conditions": "VGS = 10V, ID = 20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 3.7,+ "max": 4.8,+ "conditions": "VGS = 4.5V, ID = 16A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.39,+ "typ": null,+ "max": 2.32,+ "conditions": "VDS = VGS, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 24V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VDS = 24V, VGS = 0V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Forward Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Reverse Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 77,+ "typ": null,+ "max": null,+ "conditions": "VDS = 15V, ID = 16A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.2,+ "max": 2.4,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 34,+ "max": 51,+ "conditions": "VDS = 15V, VGS = 4.5V, ID = 16A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy, Single Pulse",+ "symbol": "EAS",+ "kind": "electrical",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "Starting TJ = 25°C, L = 2.0mH, RG = 25Ω, IAS = 16A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAR",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.1,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current (Body Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "TJ = 25°C, IS = 16A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 41,+ "max": 62,+ "conditions": "TJ = 25°C, IF = 16A, VDD = 10V, di/dt = 100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 39,+ "max": 59,+ "conditions": "TJ = 25°C, IF = 16A, VDD = 10V, di/dt = 100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Breakdown Voltage Temperature Coefficient",+ "symbol": "ΔBVDSS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "V/°C",+ "min": null,+ "typ": 0.023,+ "max": null,+ "conditions": "Reference to 25°C, ID = 1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage Coefficient",+ "symbol": "ΔVGS(th)",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": 5.7,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pre-Vth Gate-to-Source Charge",+ "symbol": "Qgs1",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 8.6,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Post-Vth Gate-to-Source Charge",+ "symbol": "Qgs2",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.9,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 12,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Charge Overdrive",+ "symbol": "Qgodr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 10.5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Switch Charge (Qgs2 + Qgd)",+ "symbol": "Qsw",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 14.9,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Charge",+ "symbol": "Qoss",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 23,+ "max": null,+ "conditions": "VDS = 16V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": null,+ "conditions": "VDD = 15V, VGS = 4.5V, ID = 16A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6.7,+ "max": null,+ "conditions": "VDD = 15V, VGS = 4.5V, ID = 16A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 21,+ "max": null,+ "conditions": "VDD = 15V, VGS = 4.5V, ID = 16A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": null,+ "conditions": "VDD = 15V, VGS = 4.5V, ID = 16A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 4310,+ "max": null,+ "conditions": "VGS = 0V, VDS = 15V, ƒ = 1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 990,+ "max": null,+ "conditions": "VGS = 0V, VDS = 15V, ƒ = 1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 450,+ "max": null,+ "conditions": "VGS = 0V, VDS = 15V, ƒ = 1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -221,4 +756,4 @@ "visibility": { "public": true }-}+}