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IRF7832TRPBF

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Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IRF7832TRPBF

Infineon Technologies · MOSFETs · SO-8

IRF7832TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; the datasheet gives 20A continuous drain current at TA = 25°C.
2 S passive Source of the N-channel MOSFET, connected to the same source as pins 1 and 3.
3 S passive Source of the N-channel MOSFET, connected to the same source as pins 1 and 2.
4 G input Gate of the N-channel MOSFET; the maximum gate-to-source voltage is ±20V.
5 D passive Drain of the N-channel MOSFET; the maximum drain-to-source voltage is 30V.
6 D passive Drain of the N-channel MOSFET, connected to the same drain as pins 5, 7 and 8.
7 D passive Drain of the N-channel MOSFET, connected to the same drain as pins 5, 6 and 8.
8 D passive Drain of the N-channel MOSFET, connected to the same drain as pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 20 A VGS @ 10V, TA = 25°C 1
Continuous Drain Current ID 16 A VGS @ 10V, TA = 70°C 1
Pulsed Drain Current IDM 160 A 1
Power Dissipation PD 2.5 W TA = 25°C 1
Power Dissipation PD 1.6 W TA = 70°C 1
Linear Derating Factor 0.02 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 155 °C 1
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 1
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W When mounted on 1 inch square copper board 1
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 3.1 4 mΩ VGS = 10V, ID = 20A 2
Static Drain-to-Source On-Resistance RDS(on) 3.7 4.8 mΩ VGS = 4.5V, ID = 16A 2
Gate Threshold Voltage VGS(th) 1.39 2.32 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 24V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 µA VDS = 24V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 77 S VDS = 15V, ID = 16A 2
Gate Resistance Rg 1.2 2.4 Ω 2
Total Gate Charge Qg 34 51 nC VDS = 15V, VGS = 4.5V, ID = 16A 2
Avalanche Energy, Single Pulse EAS 260 mJ Starting TJ = 25°C, L = 2.0mH, RG = 25Ω, IAS = 16A 2
Avalanche Current IAR 16 A 2
Continuous Source Current (Body Diode) IS 3.1 A 2
Pulsed Source Current (Body Diode) ISM 160 A 2
Diode Forward Voltage VSD 1 V TJ = 25°C, IS = 16A, VGS = 0V 2
Reverse Recovery Time trr 41 62 ns TJ = 25°C, IF = 16A, VDD = 10V, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 39 59 nC TJ = 25°C, IF = 16A, VDD = 10V, di/dt = 100A/µs 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.023 V/°C Reference to 25°C, ID = 1mA 2
Gate Threshold Voltage Coefficient ΔVGS(th) 5.7 mV/°C 2
Pre-Vth Gate-to-Source Charge Qgs1 8.6 nC 2
Post-Vth Gate-to-Source Charge Qgs2 2.9 nC 2
Gate-to-Drain Charge Qgd 12 nC 2
Gate Charge Overdrive Qgodr 10.5 nC 2
Switch Charge (Qgs2 + Qgd) Qsw 14.9 nC 2
Output Charge Qoss 23 nC VDS = 16V, VGS = 0V 2
Turn-On Delay Time td(on) 12 ns VDD = 15V, VGS = 4.5V, ID = 16A 2
Rise Time tr 6.7 ns VDD = 15V, VGS = 4.5V, ID = 16A 2
Turn-Off Delay Time td(off) 21 ns VDD = 15V, VGS = 4.5V, ID = 16A 2
Fall Time tf 13 ns VDD = 15V, VGS = 4.5V, ID = 16A 2
Input Capacitance Ciss 4310 pF VGS = 0V, VDS = 15V, ƒ = 1.0MHz 2
Output Capacitance Coss 990 pF VGS = 0V, VDS = 15V, ƒ = 1.0MHz 2
Reverse Transfer Capacitance Crss 450 pF VGS = 0V, VDS = 15V, ƒ = 1.0MHz 2

CAD (KiCad official)

  • Symbol: IRF7832TRPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7832trpbf-etched.step / irf7832trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7832trpbf.step / irf7832trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 be0e3e48bc4396aa, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF