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IRF7821TR

UMW · MOSFETs · SOP-8

IRF7821TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are internally common source).
2 S passive SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are internally common source).
3 S passive SOURCE terminal of the N-channel MOSFET (pins 1, 2 and 3 are internally common source).
4 G input GATE terminal that controls the MOSFET; the datasheet gives a VGS rating of ±20V (Gate-to-Source Voltage).
5 D passive DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are internally common drain).
6 D passive DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are internally common drain).
7 D passive DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are internally common drain).
8 D passive DRAIN terminal of the N-channel MOSFET (pins 5 to 8 are internally common drain).

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 13.6 A VGS=10V, TA=25°C 1
Continuous Drain Current ID 11 A VGS=10V, TA=70°C 1
Pulsed Drain Current IDM 100 A 1
Maximum Power Dissipation PD 2.5 W TA=25°C 1
Maximum Power Dissipation PD 1.6 W TA=70°C 1
Linear Derating Factor 0.02 W/°C 1
Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Drain Lead RθJL 20 °C/W 2
Junction-to-Ambient RθJA 50 °C/W 2
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1 V VDS=VGS, ID=250μA 3
Static Drain-to-Source On-Resistance RDS(ON) 7 mΩ VGS=10V, ID=13A 3
Static Drain-to-Source On-Resistance RDS(ON) 9.5 mΩ VGS=4.5V, ID=10A 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 150 µA VDS=24V, VGS=0V, TJ=125°C 3
Continuous Source Current (Body Diode) IS 3.1 A 4
Pulsed Source Current (Body Diode) ISM 100 A 4
Diode Forward Voltage VSD 1 V TJ=25°C, IS=10A, VGS=0V 4

CAD (KiCad official)

  • Symbol: IRF7821TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7821tr-etched.step / irf7821tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7821tr.step / irf7821tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 189aa53b262ece00, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF