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IRF7809AVTRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7809AVTRPBF-VB
VBsemi Elec · MOSFETs · SO-8
IRF7809AVTRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the continuous source-drain diode current IS is rated 10 A at TC = 25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the continuous source-drain diode current IS is rated 10 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the continuous source-drain diode current IS is rated 10 A at TC = 25 °C. |
| 4 | G | input | Gate terminal; the gate-source voltage VGS is limited to ±20 V. |
| 5 | D | passive | Drain terminal; the drain-source voltage VDS is rated 30 V. |
| 6 | D | passive | Drain terminal; the drain-source voltage VDS is rated 30 V. |
| 7 | D | passive | Drain terminal; the drain-source voltage VDS is rated 30 V. |
| 8 | D | passive | Drain terminal; the drain-source voltage VDS is rated 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Gate Resistance | Rg | 0.36 | 1.8 | 3.6 | Ω | f = 1 MHz | 2 |
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TJ = 150 °C), TC = 25 °C | ID | 13 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current, TA = 25 °C | ID | 9 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current, TA = 70 °C | ID | 7 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 45 | A | 1 | |||
| Avalanche Energy | EAS | 21 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation, TA = 25 °C | PD | 2.2 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation, TA = 70 °C | PD | 1.3 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 39 | 55 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient, steady state (note d) | RthJA | 85 | °C/W | Steady state | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 25 | 29 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
IRF7809AVTRPBF-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
irf7809avtrpbf-vb-etched.step/irf7809avtrpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7809avtrpbf-vb.step/irf7809avtrpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
4a9152313218c284, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7809AVTRPBF-VB
**VBsemi Elec** · MOSFETs · SO-8
IRF7809AVTRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the continuous source-drain diode current IS is rated 10 A at TC = 25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the continuous source-drain diode current IS is rated 10 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the continuous source-drain diode current IS is rated 10 A at TC = 25 °C. |
| 4 | G | input | Gate terminal; the gate-source voltage VGS is limited to ±20 V. |
| 5 | D | passive | Drain terminal; the drain-source voltage VDS is rated 30 V. |
| 6 | D | passive | Drain terminal; the drain-source voltage VDS is rated 30 V. |
| 7 | D | passive | Drain terminal; the drain-source voltage VDS is rated 30 V. |
| 8 | D | passive | Drain terminal; the drain-source voltage VDS is rated 30 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 20 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Gate Resistance | Rg | 0.36 | 1.8 | 3.6 | Ω | f = 1 MHz | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (TJ = 150 °C), TC = 25 °C | ID | | | 13 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current, TA = 25 °C | ID | | | 9 | A | TA = 25 °C | 1 |
| Continuous Drain Current, TA = 70 °C | ID | | | 7 | A | TA = 70 °C | 1 |
| Pulsed Drain Current | IDM | | | 45 | A | | 1 |
| Avalanche Energy | EAS | | | 21 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation, TA = 25 °C | PD | | | 2.2 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation, TA = 70 °C | PD | | | 1.3 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 39 | 55 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient, steady state (note d) | RthJA | | | 85 | °C/W | Steady state | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 25 | 29 | °C/W | Steady State | 1 |
## CAD (KiCad official)
- Symbol: `IRF7809AVTRPBF-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7809avtrpbf-vb-etched.step` / `irf7809avtrpbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7809avtrpbf-vb.step` / `irf7809avtrpbf-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/irf7809avtrpbf-vb-datasheet.pdf) (9 pp, sha256 `4a9152313218c284`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7809avtrpbf-vb-datasheet.pdf)