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IRF7807TR

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7807TR

UMW · MOSFETs · SOP-8

IRF7807TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S power_in SOURCE terminal of the 30 V N-channel MOSFET; the device is rated VDS 30 V with VGS ±20 V and continuous ID 11 A at TA=25°C.
2 S power_in SOURCE terminal of the 30 V N-channel MOSFET; the device is rated VDS 30 V with VGS ±20 V and continuous ID 11 A at TA=25°C.
3 S power_in SOURCE terminal of the 30 V N-channel MOSFET; the device is rated VDS 30 V with VGS ±20 V and continuous ID 11 A at TA=25°C.
4 G input GATE terminal controlling the N-channel MOSFET; the gate-source voltage is rated ±20 V (VGS).
5 D passive DRAIN terminal of the 30 V N-channel MOSFET; the device is rated VDS 30 V and continuous ID 11 A at TA=25°C.
6 D passive DRAIN terminal of the 30 V N-channel MOSFET; the device is rated VDS 30 V and continuous ID 11 A at TA=25°C.
7 D passive DRAIN terminal of the 30 V N-channel MOSFET; the device is rated VDS 30 V and continuous ID 11 A at TA=25°C.
8 D passive DRAIN terminal of the 30 V N-channel MOSFET; the device is rated VDS 30 V and continuous ID 11 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1.35 2.25 V VDS=VGS, ID=250µA 3
Static Drain-to-Source On-Resistance RDS(ON) 11 13.8 mΩ VGS=10V, ID=11A 3
Static Drain-to-Source On-Resistance RDS(ON) 14.5 18.2 mΩ VGS=4.5V, ID=8.8A 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 150 µA VDS=24V, VGS=0V, TJ=125°C 3
Breakdown Voltage Temp. Coefficient ΔBVDSS/TJ 0.023 V/°C ID=1mA, Reference to 25°C 3
Gate Threshold Voltage Temp. Coefficient ΔVGS(th) -4.7 mV/°C 3
Forward Transconductance gfs 22 S VDS=15V, ID=8.8A 3
Continuous Drain Current, VGS @ 10V ID 11 A TA=25°C 1
Continuous Drain Current, VGS @ 10V ID 8.7 A TA=70°C 1
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 88 A Repetitive rating; pulse width limited by max. junction temperature 1
Power Dissipation PD 2.5 W TA=25°C 1
Power Dissipation PD 1.6 W TA=70°C 1
Linear Derating Factor 0.02 W/°C 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 2
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W Surface mounted on FR-4 board 2

CAD (KiCad official)

  • Symbol: IRF7807TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7807tr-etched.step / irf7807tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7807tr.step / irf7807tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 c8a3c8473c09a8b1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF