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IRF7476TR

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7476TR

UMW · MOSFETs · SOP-8

IRF7476TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal, tied internally with pins 2 and 3; the device is rated VDS 12 V and VGS ±12 V.
2 S passive SOURCE terminal, tied internally with pins 1 and 3; the device is rated VDS 12 V and VGS ±12 V.
3 S passive SOURCE terminal, tied internally with pins 1 and 2; the device is rated VDS 12 V and VGS ±12 V.
4 G input GATE terminal; absolute maximum VGS is ±12 V, and RDS(on) is specified at VGS = 4.5 V (<8 mΩ) and 2.8 V (<30 mΩ).
5 D passive DRAIN terminal, tied internally with pins 6, 7 and 8; continuous drain current is rated 15 A at VGS = 10 V, TA = 25 °C.
6 D passive DRAIN terminal, tied internally with pins 5, 7 and 8; continuous drain current is rated 15 A at VGS = 10 V, TA = 25 °C.
7 D passive DRAIN terminal, tied internally with pins 5, 6 and 8; continuous drain current is rated 15 A at VGS = 10 V, TA = 25 °C.
8 D passive DRAIN terminal, tied internally with pins 5, 6 and 7; continuous drain current is rated 15 A at VGS = 10 V, TA = 25 °C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 12 V 1
Gate-to-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 15 A VGS=10V, TA=25°C 1
Continuous Drain Current ID 12 A VGS=10V, TA=70°C 1
Pulsed Drain Current IDM 120 A Repetitive rating; pulse width limited by max. junction temperature 1
Maximum Power Dissipation PD 2.5 W TA=25°C 1
Maximum Power Dissipation PD 1.6 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source On-Resistance (feature limit) RDS(ON) 8 mΩ VGS=4.5V 1
Drain-Source On-Resistance (feature limit) RDS(ON) 30 mΩ VGS=2.8V 1
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 2
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W Mounted on 1 inch square copper board 2
Drain-Source Breakdown Voltage V(BR)DSS 12 V ID=250µA, VGS=0V 3
Breakdown Voltage Temperature Coefficient ΔV(BR)DSS/ΔTJ 0.6 V/°C ID=1mA, Reference to 25°C 3

CAD (KiCad official)

  • Symbol: IRF7476TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7476tr-etched.step / irf7476tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7476tr.step / irf7476tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 7aefdf9e18793136, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF