IRF7475TRPBF-VB

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  "slug": "irf7475trpbf-vb",
  "title": "IRF7475TRPBF-VB",
  "brief": "VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "IRF7475TRPBF-VB",
    "manufacturer": "VBsemi Elec",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603135083818217472",
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    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET. Pins 1, 2, and 3 are tied together internally as the Source. Continuous source-drain diode current up to 10 A at TC = 25 °C; body diode forward voltage ~0.8 V (typ.) at IS = 9 A."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET. Paralleled with pins 1 and 3 to reduce package resistance and improve current handling."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET. Paralleled with pins 1 and 2."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET. VGS(th) = 1.0 V min / 3.0 V max at ID = 250 µA. Absolute maximum gate-source voltage VGS = ±20 V. Gate resistance Rg ≈ 1.8 Ω (typ.), 3.6 Ω (max) at 1 MHz."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET. Pins 5, 6, 7, and 8 are tied together internally as the Drain. VDS(max) = 30 V; RDS(on) = 0.008 Ω (typ.) at VGS = 10 V, ID = 10 A."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET. Paralleled with pins 5, 7, and 8 for improved current handling and heat dissipation."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET. Paralleled with pins 5, 6, and 8."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET. Paralleled with pins 5, 6, and 7."
      }
    ],
    "provenance": {
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
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        "refuses_to_fabricate": true
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        "seat": "z = 0",
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          4.9,
          1.75
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        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
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        "sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
        "checked": "2026-10-07",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "SO-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    }
  },
  "variants": [
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      "mpn": "IRF7475TRPBF-VB",
      "kind": "packaging"
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  "discovery_pitch": "IRF7475TRPBF-VB (VBsemi Elec) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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  "updated_at": "2026-09-24T22:51:48.346Z"
}