# IRF7473TRPBF-VB

**VBsemi Elec** · MOSFETs · SO-8

IRF7473TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates continuous source-drain diode current at 7 A (TC = 25 °C) and 3.8 A (TA = 25 °C). |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates continuous source-drain diode current at 7 A (TC = 25 °C) and 3.8 A (TA = 25 °C). |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates continuous source-drain diode current at 7 A (TC = 25 °C) and 3.8 A (TA = 25 °C). |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C. |
| 7 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C. |
| 8 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 9 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 6 | A | TJ = 150 °C, TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | TJ = 150 °C, TA = 70 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 40 | A |  | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 7 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 3.8 | A | TA = 25 °C | 1 |
| Single Pulse Avalanche Current | IAS |  |  | 30 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 112 | mJ |  | 1 |
| Maximum Power Dissipation | PD |  |  | 14 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 5 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 4 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 2 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 33 | 40 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA |  |  | 80 | °C/W | Steady state, per note d | 1 |
| Maximum Junction-to-Foot (Drain) Steady State | RthJF |  | 17 | 21 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 30 |  |  | A | VDS ≥ 10 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 33 | mΩ | VGS = 4.5 V, ID = 5 A | 2 |
| Total Gate Charge | Qg |  | 28.5 | 43 | nC | VDS = 75 V, VGS = 10 V, ID = 5 A | 2 |
| Total Gate Charge | Qg |  | 23 | 35 | nC | VDS = 75 V, VGS = 8 V, ID = 5 A | 2 |
| Gate Resistance | Rg |  | 0.8 | 1.3 | Ω | f = 1 MHz | 2 |
| Turn-on Delay Time | td(on) |  | 14 | 21 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 12 | 18 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 22 | 33 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 6 | 10 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-on Delay Time | td(on) |  | 16 | 24 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 20 | 30 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 7 | 12 | ns | VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD |  | 0.77 | 1.2 | V | IS = 2.6 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 63 | 95 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 110 | 165 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |

## CAD (KiCad official)

- Symbol: `IRF7473TRPBF-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7473trpbf-vb-etched.step` / `irf7473trpbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7473trpbf-vb.step` / `irf7473trpbf-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590903707620098048) (9 pp, sha256 `83db55a3223a9978`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf7473trpbf-vb-datasheet.pdf)