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Contents

README

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IRF7470TR

UMW · MOSFETs · SOP-8

IRF7470TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the N-channel MOSFET, per the pinning table.
2 S passive SOURCE terminal of the N-channel MOSFET, per the pinning table.
3 S passive SOURCE terminal of the N-channel MOSFET, per the pinning table.
4 G input GATE terminal of the N-channel MOSFET; the gate-to-source voltage limit is ±12 V per the absolute maximum ratings.
5 D passive DRAIN terminal of the N-channel MOSFET, per the pinning table.
6 D passive DRAIN terminal of the N-channel MOSFET, per the pinning table.
7 D passive DRAIN terminal of the N-channel MOSFET, per the pinning table.
8 D passive DRAIN terminal of the N-channel MOSFET, per the pinning table.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-to-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 10 A VGS=10V, TA=25°C 1
Continuous Drain Current ID 8.5 A VGS=10V, TA=70°C 1
Pulsed Drain Current IDM 85 A 1
Maximum Power Dissipation PD 2.5 W TA=25°C 1
Maximum Power Dissipation PD 1.6 W TA=70°C 1
Linear Derating Factor 0.02 mW/°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W When mounted on 1 inch square copper board 2
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 2
Drain-Source Breakdown Voltage V(BR)DSS 40 V ID=250µA, VGS=0V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.04 V/°C ID=1mA, Reference to 25°C 3
Static Drain-to-Source On-Resistance RDS(ON) 9 mΩ VGS=10V, ID=10A 3
Static Drain-to-Source On-Resistance RDS(ON) 10 mΩ VGS=4.5V, ID=8A 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=12V 3
Gate-to-Source Reverse Leakage IGSS -200 nA VGS=-12V 3
Forward Transconductance gFS 44 S VDS=20V, ID=8A 3
Input Capacitance Ciss 3430 pF VGS=0V, VDS=20V, f=1.0MHz 3
Output Capacitance Coss 690 pF VGS=0V, VDS=20V, f=1.0MHz 3
Reverse Transfer Capacitance Crss 41 pF VGS=0V, VDS=20V, f=1.0MHz 3
Diode Forward Voltage VSD 0.8 1.3 V TJ=25°C, IS=8A, VGS=0V 4
Continuous Source Current (Body Diode) IS 2.3 A 4
Pulsed Source Current (Body Diode) ISM 85 A 4

CAD (KiCad official)

  • Symbol: IRF7470TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7470tr-etched.step / irf7470tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7470tr.step / irf7470tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 70c6e68ffc28d031, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF