# IRF7469TRPBF-VB

**VBsemi Elec** · MOSFETs · SO-8

IRF7469TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, rated 40 V VDS with a continuous source-drain diode current IS of 30 A at TC = 25 °C and a pulsed diode current ISM of 50 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, rated 40 V VDS with a continuous source-drain diode current IS of 30 A at TC = 25 °C and a pulsed diode current ISM of 50 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, rated 40 V VDS with a continuous source-drain diode current IS of 30 A at TC = 25 °C and a pulsed diode current ISM of 50 A. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of ±20 V (VGS) and gate-source threshold VGS(th) of 1 to 3 V at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated 40 V drain-source breakdown (VDS) and connected internally to the other drain pins 6 to 8. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated 40 V drain-source breakdown (VDS) and connected internally to the other drain pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, rated 40 V drain-source breakdown (VDS) and connected internally to the other drain pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, rated 40 V drain-source breakdown (VDS) and connected internally to the other drain pins 5 to 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Pulsed Drain Current | IDM |  |  | 50 | A |  | 1 |
| Avalanche Current | IAS |  |  | 15 | A |  | 1 |
| Avalanche Energy | EAS |  |  | 11 | mJ | L = 0.1 mH | 1 |
| Thermal Resistance, Junction-to-Ambient (steady state) | RthJA |  | 37 | 50 | °C/W | Steady state | 1 |
| Thermal Resistance, Junction-to-Ambient (t ≤ 10 s) | RthJA |  | 17 | 21 | °C/W | t ≤ 10 s | 1 |
| Drain-Source Breakdown Voltage | VDS | 40 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 40 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | VDS = 40 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 50 |  |  | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.014 | Ω | VGS = 10 V, ID = 12.4 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.016 | Ω | VGS = 4.5 V, ID = 10.8 A | 2 |
| Total Gate Charge | Qg |  | 33 | 50 | nC | VDS = 10 V, VGS = 10 V, ID = 12.4 A | 2 |
| Total Gate Charge | Qg |  | 15 | 23 | nC | VDS = 10 V, VGS = 4.5 V, ID = 12.4 A | 2 |
| Gate Resistance | Rg |  | 1.4 | 2.1 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time (VGEN = 4.5 V) | td(on) |  | 25 | 40 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time (VGEN = 4.5 V) | tr |  | 12 | 20 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time (VGEN = 4.5 V) | td(off) |  | 25 | 40 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time (VGEN = 4.5 V) | tf |  | 10 | 15 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time (VGEN = 10 V) | td(on) |  | 10 | 15 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time (VGEN = 10 V) | tr |  | 15 | 25 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time (VGEN = 10 V) | td(off) |  | 30 | 45 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time (VGEN = 10 V) | tf |  | 10 | 15 | ns | VDD = 20 V, RL = 2 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD |  | 0.8 | 1.2 | V | IS = 10 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 30 | 60 | ns | IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 26 | 52 | nC | IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |

## CAD (KiCad official)

- Symbol: `IRF7469TRPBF-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7469trpbf-vb-etched.step` / `irf7469trpbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7469trpbf-vb.step` / `irf7469trpbf-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/irf7469trpbf-vb-datasheet.pdf) (9 pp, sha256 `e4a7bcefe4d3fac2`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf7469trpbf-vb-datasheet.pdf)